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1. WO2022008690 - METHOD FOR PRODUCING A DIELECTRIC LAYER ON A STRUCTURE MADE OF III-V MATERIALS

Publication Number WO/2022/008690
Publication Date 13.01.2022
International Application No. PCT/EP2021/069075
International Filing Date 08.07.2021
IPC
H01L 21/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/66 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
CPC
H01L 21/02178
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02172the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
02175characterised by the metal
02178the material containing aluminium, e.g. Al2O3
H01L 21/022
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
022the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
H01L 21/02274
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02263deposition from the gas or vapour phase
02271deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
02274in the presence of a plasma [PECVD]
H01L 21/0228
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02263deposition from the gas or vapour phase
02271deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
0228deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
H01L 21/28264
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
28008Making conductor-insulator-semiconductor electrodes
28264the insulator being formed after the semiconductor body, the semiconductor being a III-V compound
H01L 29/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
20including, apart from doping materials or other impurities, only AIIIBV compounds
Applicants
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES [FR]/[FR]
  • CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE [FR]/[FR]
  • UNIVERSITE GRENOBLE ALPES [FR]/[FR]
Inventors
  • LEGALLAIS, Maxime
  • SALEM, Bassem
  • BARON, Thierry
  • GWOZIECKI, Romain
  • PLISSONNIER, Marc
Agents
  • HAUTIER, Nicolas
Priority Data
200727909.07.2020FR
Publication Language French (fr)
Filing Language French (FR)
Designated States
Title
(EN) METHOD FOR PRODUCING A DIELECTRIC LAYER ON A STRUCTURE MADE OF III-V MATERIALS
(FR) PROCÉDÉ DE RÉALISATION D'UNE COUCHE DIÉLECTRIQUE SUR UNE STRUCTURE EN MATÉRIAUX III-V
Abstract
(EN) The invention relates to a method for producing, on a structure (70) based on a lll-V material, a dielectric layer (71), the method comprising carrying out the following sequences: • - producing a first dielectric film (71A) using ALD by carrying out a plurality of first cycles (IA) each comprising at least: • •injecting (10A), into the reaction chamber (210), a precursor based on a first material, • • injecting (30A), into the reaction chamber (210), a precursor based on water (H 2O) or on ozone (O 3), • - producing, on the first dielectric film (71A), a second dielectric film (71 B) using plasma-enhanced ALD by carrying out a plurality of second cycles (1 B) each comprising at least: • •injecting (10B), into the reaction chamber (210), a precursor based on a second material, • • injecting (30B), into the reaction chamber (210), a precursor based on oxygen (O) or on nitrogen (N).
(FR) L'invention concerne un procédé de réalisation, sur une structure (70) à base d'un matériau lll-V, d'une couche diélectrique (71), le procédé comprenant les séquences suivantes effectuées : • - réaliser un premier film diélectrique (71A) par ALD en effectuant une pluralité de premiers cycles (IA) comprenant chacun au moins: • •une injection (10A) dans la chambre de réaction (210) d'un précurseur à base d'un premier matériau, • • une injection (30A) dans la chambre de réaction (210) d'un précurseur à base d'eau (H 2O) ou d'ozone (0 3), • - réaliser, sur le premier film diélectrique (71A), un deuxième film diélectrique (71 B) par ALD assisté par plasma en effectuant une pluralité de deuxièmes cycles (1 B) comprenant chacun au moins : • • une injection (10B) dans la chambre de réaction (210) d'un précurseur à base d'un deuxième matériau, • • une injection (30B) dans la chambre de réaction (210) d'un précurseur à base d'oxygène (O) ou d'azote (N).
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