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1. WO2022008102 - OPTICAL ILLUMINATION SYSTEM FOR GUIDING EUV RADIATION

Publication Number WO/2022/008102
Publication Date 13.01.2022
International Application No. PCT/EP2021/052823
International Filing Date 05.02.2021
IPC
G03F 7/20 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G21K 1/06 2006.1
GPHYSICS
21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
1Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
06using diffraction, refraction, or reflection, e.g. monochromators
G02B 5/18 2006.1
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
5Optical elements other than lenses
18Diffracting gratings
CPC
G02B 5/1838
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
5Optical elements other than lenses
18Diffraction gratings
1838for use with ultraviolet radiation or X-rays
G03F 7/70158
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70058Mask illumination systems
7015Details of optical elements
70158Diffractive optical elements
G03F 7/70191
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70058Mask illumination systems
70191Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarization, phase or the like
G03F 7/702
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70058Mask illumination systems
702Reflective illumination, i.e. reflective optical elements other than folding mirrors
G03F 7/70941
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
708Construction of apparatus, e.g. environment, hygiene aspects or materials
70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution, removing pollutants from apparatus; electromagnetic and electrostatic-charge pollution
70941Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
G21K 1/062
GPHYSICS
21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
1Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
06using diffraction, refraction or reflection, e.g. monochromators
062Devices having a multilayer structure
Applicants
  • CARL ZEISS SMT GMBH [DE]/[DE]
Inventors
  • PATRA, Michael
Agents
  • RAU, SCHNECK & HÜBNER PATENTANWÄLTE RECHTSANWÄLTE PARTGMBB
Priority Data
10 2020 208 665.610.07.2020DE
Publication Language German (de)
Filing Language German (DE)
Designated States
Title
(DE) OPTISCHES BELEUCHTUNGSSYSTEM ZUR FÜHRUNG VON EUV-STRAHLUNG
(EN) OPTICAL ILLUMINATION SYSTEM FOR GUIDING EUV RADIATION
(FR) SYSTÈME D'ÉCLAIRAGE OPTIQUE SERVANT À GUIDER UN RAYONNEMENT EUV
Abstract
(DE) Ein optisches Beleuchtungssystem dient zur Führung von EUV-Strahlung (3i) zwischen einem Quellbereich einer EUV-Lichtquelle und einem Objektfeld, in dem ein abzubildendes Objekt anordenbar ist. Das Beleuchtungssystem hat EUV-Spiegel-Komponenten, die sequentiell die EUV-Strahlung (3i) zwischen dem Quellbereich und dem Objektfeld führen. Mindestens ein Reflexionsabschnitt (8, 15) einer der EUV-Spiegelkomponenten ist innerhalb eines Strahlengangs der EUV-Strahlung (3i) mit Strahlung in einem Einfallswinkelbereich (Δα) zwischen einem minimalen Einfallswinkel und einem maximalen Einfallswinkel beaufschlagbar. Auf dem Reflexionsabschnitt (8, 15) ist eine optische Beugungskomponente zur Unterdrückung von im Strahlengang mitgeführter Falschlicht-Strahlung (36i) angeordnet. Die optische Beugungskomponente ist so ausgeführt, dass im gesamten Einfallswinkelbereich (Δα) die Falschlicht-Strahlung (36i) mit einem Unterdrückungsverhältnis zwischen einer Intensität des auf den Reflexionsabschnitt (8, 15) einfallenden Falschlichts (36i) und einer Intensität des vom Reflexionsabschnitt (8, 15) in Richtung des Strahlengangs ausfallenden Falschlichts (36i) unterdrückt ist, das besser ist als 1000. Es resultiert eine verbesserte Falschlichtunterdrückung.
(EN) The invention relates to an optical illumination system for guiding EUV radiation (3i) between a source region (4) of an EUV light source (2) and an object field, in which an object to be imaged can be arranged. The illumination system has EUV mirror components which sequentially guide the EUV radiation (3i) between the source region and the object field. At least one reflection segment (8, 15) of one of the EUV mirror components can be subjected within a beam path of the EUV radiation (3i) to radiation in a range of angles of incidence (Δα) between a minimum angle of incidence and a maximum angle of incidence. An optical diffraction component for suppressing stray light radiation (36i) carried with in the beam path is arranged on the reflection segment (8, 15). The optical diffraction component is designed in such a manner that the stray light radiation (36i) is suppressed in the entire range of angles of incidence with a suppression ratio between an intensity of the stray light (36i) incident on the reflection segment (8, 15) and an intensity of the stray light (36i) exiting from the reflection segment (8, 15) in the direction of the beam path, the suppression ratio being better than 1000. The result is an improved stray light suppression.
(FR) L'invention concerne un système d'éclairage optique servant à guider un rayonnement EUV (3i) entre une région de source (4) d'une source de lumière EUV (2) et un champ d'objet dans lequel un objet à imager peut être agencé. Le système d'éclairage comprend des composants de miroir EUV qui guident de manière séquentielle le rayonnement EUV (3i) entre la région de source et le champ d'objet. Au moins un segment de réflexion (8, 15) de l'un des composants de miroir EUV peut être soumis, dans un trajet de faisceau du rayonnement EUV (3i), à un rayonnement dans une plage d'angles d'incidence (Δα) se situant entre un angle d'incidence minimal et un angle d'incidence maximal. Un composant de diffraction optique servant à supprimer un rayonnement de lumière parasite (36i) transporté dans le trajet de faisceau est disposé sur le segment de réflexion (8, 15). Le composant de diffraction optique est conçu de telle manière que le rayonnement de lumière parasite (36i) est supprimé dans toute la plage d'angles d'incidence avec un rapport de suppression se trouvant entre une intensité de la lumière parasite (36i) incidente sur le segment de réflexion (8, 15) et une intensité de la lumière parasite (36i) sortant du segment de réflexion (8, 15) dans la direction du trajet de faisceau, le rapport de suppression étant supérieur à 1000. Le résultat est une meilleure suppression de la lumière parasite.
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