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1. WO2022007600 - SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR

Publication Number WO/2022/007600
Publication Date 13.01.2022
International Application No. PCT/CN2021/100239
International Filing Date 16.06.2021
IPC
H01L 21/768 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
H01L 27/115 2017.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
H01L 21/8242 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8239Memory structures
8242Dynamic random access memory structures (DRAM)
CPC
H01L 21/76831
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76801characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
76829characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
76831in via holes or trenches, e.g. non-conductive sidewall liners
H01L 21/76838
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76838characterised by the formation and the after-treatment of the conductors
H01L 21/76885
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76838characterised by the formation and the after-treatment of the conductors
76885By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
H01L 21/823468
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
823468with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
H01L 23/49866
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; ; Selection of materials therefor
488consisting of soldered ; or bonded; constructions
498Leads, ; i.e. metallisations or lead-frames; on insulating substrates, ; e.g. chip carriers
49866characterised by the materials
H01L 23/528
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
528Geometry or; layout of the interconnection structure
Applicants
  • 长鑫存储技术有限公司 CHANGXIN MEMORY TECHNOLOGIES, INC. [CN]/[CN]
Inventors
  • 刘志拯 LIU, Chih-Cheng
Agents
  • 广州华进联合专利商标代理有限公司 ADVANCE CHINA IP LAW OFFICE
Priority Data
202010649880.008.07.2020CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
(FR) STRUCTURE SEMI-CONDUCTRICE ET SON PROCÉDÉ DE FABRICATION
(ZH) 半导体结构及其制作方法
Abstract
(EN) A manufacturing method for a semiconductor structure, the method comprising: forming a sacrificial layer on a substrate; forming a trench in the sacrificial layer; forming a first spacing structure in the trench, with the first spacing structure at least covering a side wall of the trench; forming a first conductive structure in the trench; forming a second conductive structure which covers an outer side wall of the first spacing structure; forming a second spacing structure which covers an outer side wall of the second conductive structure; and forming a third conductive structure which covers an outer side wall of the second spacing structure.
(FR) Procédé de fabrication d'une structure semi-conductrice, le procédé consistant à : former une couche sacrificielle sur un substrat ; former une tranchée dans la couche sacrificielle ; former une première structure d'espacement dans la tranchée, la première structure d'espacement recouvrant au moins une paroi latérale de la tranchée ; former une première structure conductrice dans la tranchée ; former une deuxième structure conductrice qui recouvre une paroi latérale extérieure de la première structure d'espacement ; former une seconde structure d'espacement qui recouvre une paroi latérale extérieure de la deuxième structure conductrice ; et former une troisième structure conductrice qui recouvre une paroi latérale extérieure de la seconde structure d'espacement.
(ZH) 一种半导体结构的制作方法包括:在衬底上形成牺牲层;在牺牲层内形成沟槽;在沟槽内形成第一间隔结构,第一间隔结构至少覆盖沟槽的侧壁;在沟槽以形成第一导电结构;形成覆盖第一间隔结构外侧侧壁的第二导电结构;形成覆盖第二导电结构的外侧侧壁的第二间隔结构;形成覆盖第二间隔结构外侧侧壁的第三导电结构。
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