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1. WO2022007532 - METHOD FOR MAKING DOPED AMORPHOUS SILICON ON BACK SIDE OF HBC CELL

Publication Number WO/2022/007532
Publication Date 13.01.2022
International Application No. PCT/CN2021/096270
International Filing Date 27.05.2021
IPC
H01L 31/18 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0216 2014.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
H01L 21/225 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
225using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
Applicants
  • 普乐新能源科技(徐州)有限公司 POPSOLAR TECHNOLOGY (XUZHOU) CO., LTD. [CN]/[CN]
Inventors
  • 欧文凯 OU, Wenkai
Agents
  • 北京盛凡智荣知识产权代理有限公司 BEIJING SHENGFANZHIRONG INTELLECTUAL PROPERTY AGENCY CO., LTD
Priority Data
202010663163.310.07.2020CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) METHOD FOR MAKING DOPED AMORPHOUS SILICON ON BACK SIDE OF HBC CELL
(FR) PROCÉDÉ DE FABRICATION DE SILICIUM AMORPHE DOPÉ SUR LE CÔTÉ ARRIÈRE D'UNE CELLULE HBC
(ZH) 一种制作HBC电池背面掺杂非晶硅的方法
Abstract
(EN) A method for making doped amorphous silicon on the back side of an HBC cell, comprising: an intrinsic hydrogenated amorphous silicon layer is grown on the back side of a polished N-type silicon wafer; a boron paste is printed on the hydrogenated amorphous silicon layer and dried; a phosphorus paste is printed on the hydrogenated amorphous silicon layer and dried; a printed silicon wafer is put into a laser to perform laser doping and achieve sheet resistance values required of a P region and an N region; a mask is plated onto the surface of a cell piece as a polishing barrier layer; and the portion between the P region and the N region is cut using laser to remove the mask in the middle. The uniformity and growth rate of the back side-doped amorphous silicon can be ensured.
(FR) Procédé de fabrication de silicium amorphe dopé sur le côté arrière d'une cellule HBC, comprenant : une couche de silicium amorphe hydrogéné intrinsèque est développée sur le côté arrière d'une tranche de silicium de type N polie ; une pâte de bore est imprimée sur la couche de silicium amorphe hydrogéné et séchée ; une pâte de phosphore est imprimée sur la couche de silicium amorphe hydrogéné et séchée ; une tranche de silicium imprimée est placée dans un laser pour effectuer un dopage laser et obtenir des valeurs de résistance de feuille requises d'une région P et d'une région N ; un masque est plaqué sur la surface d'une pièce de cellule en tant que couche de barrière de polissage ; et la partie entre la région P et la région N est coupée à l'aide d'un laser pour retirer le masque au milieu. L'uniformité et le taux de croissance du silicium amorphe dopé de côté arrière peuvent être assurés.
(ZH) 一种制作HBC电池背面掺杂非晶硅的方法,包括:在N型抛光后的硅片的背面生长本征的氢化非晶硅层;在氢化非晶硅层上印刷硼浆,烘干;在氢化非晶硅层上印刷磷浆,烘干;将印刷好的硅片放入激光器中进行激光实现掺杂,得到P区及N区需要达到的方阻值;给电池片表面镀上掩膜作为抛光阻挡层;用激光切割P区和N区之间的位置,去除中间的掩膜。能够保证背面掺杂非晶硅的均匀性及生长速率。
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