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1. WO2022007488 - TRENCH MOS BARRIER SCHOTTKY DIODE DEVICE AND MANUFACTURING METHOD THEREFOR

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Publication Number WO/2022/007488
Publication Date 13.01.2022
International Application No. PCT/CN2021/091299
International Filing Date 30.04.2021
IPC
H01L 27/07 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
07the components having an active region in common
CPC
H01L 21/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/02164
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
02164the material being a silicon oxide, e.g. SiO2
H01L 21/02274
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02263deposition from the gas or vapour phase
02271deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
02274in the presence of a plasma [PECVD]
H01L 21/324
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 27/07
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
07the components having an active region in common
H01L 29/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
Applicants
  • 无锡华润上华科技有限公司 CSMC TECHNOLOGIES FAB2 CO., LTD. [CN]/[CN]
Inventors
  • 冒义祥 MAO, Yixiang
  • 严晓芬 YAN, Xiaofen
  • 周俊芳 ZHOU, Junfang
Agents
  • 广州华进联合专利商标代理有限公司 ADVANCE CHINA IP LAW OFFICE
Priority Data
202010640727.106.07.2020CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) TRENCH MOS BARRIER SCHOTTKY DIODE DEVICE AND MANUFACTURING METHOD THEREFOR
(FR) DISPOSITIF À DIODE SCHOTTKY À BARRIÈRE MOS À TRANCHÉE ET SON PROCÉDÉ DE FABRICATION
(ZH) 沟槽金属氧化物半导体势垒肖特基二极管器件及其制造方法
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Abstract
(EN) A manufacturing method for a trench MOS barrier Schottky diode device. The method comprises: providing a wafer substrate (200); forming an epitaxial layer (210) on the wafer substrate (200); forming a plurality of spaced trench polycrystalline structures (220) in the epitaxial layer (210); forming a surface film layer on the epitaxial layer (210); performing ion sputtering to form a metal film layer (240) on the surface film layer; and performing first processing on the epitaxial layer (210) to increase the compressive stress of the epitaxial layer (210) on the wafer substrate (200), and/or, performing second processing on the surface film layer to increase the density of the surface film layer.
(FR) Procédé de fabrication d'un dispositif à diode Schottky à barrière MOS à tranchée. Le procédé consiste à : fournir un substrat de tranche (200) ; former une couche épitaxiale (210) sur le substrat de tranche (200) ; former une pluralité de structures polycristallines de tranchée (220) espacées dans la couche épitaxiale (210) ; former une couche de film de surface sur la couche épitaxiale (210) ; effectuer une pulvérisation ionique pour former une couche de film métallique (240) sur la couche de film de surface ; et réaliser un premier traitement sur la couche épitaxiale (210) pour augmenter la contrainte de compression de la couche épitaxiale (210) sur le substrat de tranche (200), et/ou, effectuer un second traitement sur la couche de film de surface pour augmenter la densité de la couche de film de surface.
(ZH) 一种沟槽金属氧化物半导体势垒肖特基二极管器件的制造方法，所述方法包括：提供晶圆衬底(200)；在所述晶圆衬底(200)上形成外延层(210)；在所述外延层(210)中形成多个间隔的沟槽式多晶结构(220)；在所述外延层(210)上形成表面膜层；执行离子溅射以在所述表面膜层上形成金属膜层(240)；其中，对所述外延层(210)执行第一处理，以增大所述外延层(210)对所述晶圆衬底(200)的压应力，和/或，对所述表面膜层执行第二处理，以增大所述表面膜层的致密度。
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