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1. WO2022006776 - THREE-DIMENSIONAL MEMORY DEVICES WITH CHANNEL STRUCTURES HAVING PLUM BLOSSOM SHAPE

Publication Number WO/2022/006776
Publication Date 13.01.2022
International Application No. PCT/CN2020/100870
International Filing Date 08.07.2020
IPC
H01L 27/1157 2017.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11563with charge-trapping gate insulators, e.g. MNOS or NROM
11568characterised by the memory core region
1157with cell select transistors, e.g. NAND
H01L 27/11575 2017.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11563with charge-trapping gate insulators, e.g. MNOS or NROM
11575characterised by the boundary region between the core and peripheral circuit regions
H01L 27/11582 2017.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11563with charge-trapping gate insulators, e.g. MNOS or NROM
11578characterised by three-dimensional arrangements, e.g. with cells on different height levels
1158with source and drain on different levels, e.g. with sloping channels
11582the channels comprising vertical portions, e.g. U-shaped channels
Applicants
  • YANGTZE MEMORY TECHNOLOGIES CO., LTD. [CN]/[CN]
Inventors
  • GENG, Wanbo
  • XUE, Lei
  • LIU, Xiaoxin
  • GAO, Tingting
  • CHENG, Weihua
Agents
  • NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD.
Priority Data
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) THREE-DIMENSIONAL MEMORY DEVICES WITH CHANNEL STRUCTURES HAVING PLUM BLOSSOM SHAPE
(FR) DISPOSITIFS DE MÉMOIRE À TROIS DIMENSIONS COMPRENANT DES STRUCTURES DE CANAL PRÉSENTANT UNE FORME DE FLEUR DE PRUNIER
Abstract
(EN) Embodiments of three-dimensional (3D) memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate and a channel structure extending vertically above the substrate and having a plum blossom shape including a plurality of petals in a plan view. The channel structure includes a plurality of semiconductor channels in the plurality of petals, respectively.
(FR) Des dispositifs de mémoire à trois dimensions (3D) et leurs procédés de formation sont divulgués dans des modes de réalisation. Dans un exemple, un dispositif de mémoire 3D comprend un substrat et une structure de canal s'étendant verticalement au-dessus du substrat et présentant une forme de fleur de prunier comprenant une pluralité de pétales dans une vue en plan. La structure de canal comprend une pluralité de canaux semi-conducteurs dans la pluralité de pétales, respectivement.
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