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1. WO2022006770 - ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF

Publication Number WO/2022/006770
Publication Date 13.01.2022
International Application No. PCT/CN2020/100800
International Filing Date 08.07.2020
IPC
H01L 29/778 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 23/29 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
29characterised by the material
Applicants
  • INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • ZHANG, Anbang
Agents
  • IDEA INTELLECTUAL (SHENZHEN) IP AGENCY
Priority Data
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF
(FR) DISPOSITIF ÉLECTRONIQUE ET SON PROCÉDÉ DE FABRICATION
Abstract
(EN) An electronic device which comprises: a substrate (10); a first nitride semiconductor layer (211) on the substrate (10); a second nitride semiconductor layer (212) on the first nitride semiconductor layer (211), the second nitride semiconductor layer (212) has a band gap greater than a band gap of the first nitride semiconductor layer (211); a group III-V dielectric layer is disposed on the second nitride semiconductor layer (212); a gate electrode (24) is disposed on the second nitride semiconductor layer (212); and a first passivation layer (30) is disposed on the group III-V dielectric layer, wherein the group III-V dielectric layer is separated from the gate electrode (24) by the first passivation layer (30).
(FR) L'invention concerne un dispositif électronique qui comprend : un substrat (10); une première couche semi-conductrice au nitrure (211) sur le substrat (10); une seconde couche semi-conductrice au nitrure (212) sur la première couche semi-conductrice au nitrure (211), la seconde couche semi-conductrice au nitrure (212) présentant une bande interdite supérieure à une bande interdite de la première couche semi-conductrice au nitrure (211); une couche diélectrique de groupe III-V est disposée sur la seconde couche semi-conductrice au nitrure (212); une électrode de grille (24) est disposée sur la seconde couche semi-conductrice au nitrure (212); et une première couche de passivation (30) est disposée sur la couche diélectrique du groupe III-V, la couche diélectrique du groupe III-V étant séparée de l'électrode de grille (24) par la première couche de passivation (30).
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