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1. WO2022006379 - SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH OXYGEN AND CARBON MONOLAYERS AND ASSOCIATED METHODS

Publication Number WO/2022/006379
Publication Date 06.01.2022
International Application No. PCT/US2021/040059
International Filing Date 01.07.2021
IPC
H01L 29/15 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
15Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
Applicants
  • ATOMERA INCORPORATED [US]/[US]
Inventors
  • WEEKS, Keith Doran
  • CODY, Nyles Wynn
  • HYTHA, Marek
  • MEARS, Robert J.
  • STEPHENSON, Robert John
  • TAKEUCHI, Hideki
Agents
  • REGAN, Christopher F.
  • WOODSON, II, John F.
  • TAYLOR, Michael W.
  • WARTHER, Richard K.
  • ABID, Jack G.
  • CARUS, David S.
  • MCKINNEY, Matthew G.
Priority Data
17/305,09830.06.2021US
17/305,10130.06.2021US
63/047,35602.07.2020US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH OXYGEN AND CARBON MONOLAYERS AND ASSOCIATED METHODS
(FR) DISPOSITIF À SEMI-CONDUCTEUR COMPRENANT UN SUPER-RÉSEAU AYANT DE L'OXYGÈNE ET DES MONOCOUCHES DE CARBONE ET PROCÉDÉS ASSOCIÉS
Abstract
(EN) A semiconductor device (120) may include a semiconductor layer (121) and a superlattice (125) adjacent the semiconductor layer. The superlattice may include stacked groups of layers (145a, 145b), with each group of layers comprising stacked base semiconductor monolayers (146a, 146b) defining a base semiconductor portion, and at least one non-semiconductor monolayer (150a, 150b) constrained within a crystal lattice of adjacent base semiconductor portions. The at least one non-semiconductor monolayer (150a) in a first group of layers of the superlattice may comprise oxygen and be devoid of carbon, and the at least one non-semiconductor monolayer (150b) in a second group of layers of the superlattice may comprise carbon.
(FR) La présente invention concerne un dispositif à semi-conducteur (120) pouvant comporter une couche semi-conductrice (121) et un super-réseau (125) adjacent à la couche semi-conductrice. Le super-réseau peut comprendre des groupes empilés de couches (145a, 145b), chaque groupe de couches comprenant des monocouches semi-conductrices de base empilées (146a, 146b) définissant une partie semi-conductrice de base, et au moins une monocouche non semi-conductrice (150a, 150b) définissant une partie semi-conductrice de base, et au moins une monocouche non semi-conductrice (150a, 150b) contrainte à l’intérieur d’un réseau cristallin de parties semi-conductrices de base adjacentes. L'au moins une monocouches non semi-conductrices (150a) dans un premier groupe de couches du super-réseau peut comprendre de l'oxygène et être dépourvue de carbone, et l'au moins une monocouches non semi-conductrices (150b) dans un second groupe de couches du super-réseau peut comprendre du carbone.
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