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1. WO2022006225 - SELECTIVE TUNGSTEN DEPOSITION AT LOW TEMPERATURES

Publication Number WO/2022/006225
Publication Date 06.01.2022
International Application No. PCT/US2021/039816
International Filing Date 30.06.2021
IPC
H01L 21/768 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
H01L 21/285 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283Deposition of conductive or insulating materials for electrodes
285from a gas or vapour, e.g. condensation
H01L 23/532 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
532characterised by the materials
H01L 23/522 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
Applicants
  • APPLIED MATERIALS, INC. [US]/[US]
Inventors
  • XU, Yi
  • HU, Yufei
  • LEI, Yu
  • DAITO, Kazuya
  • HE, Da
  • CEN, Jiajie
Agents
  • WRIGHT, Jonathan B.
Priority Data
16/917,04930.06.2020US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) SELECTIVE TUNGSTEN DEPOSITION AT LOW TEMPERATURES
(FR) DÉPÔT SÉLECTIF DE TUNGSTÈNE À BASSES TEMPÉRATURES
Abstract
(EN) Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.
(FR) Des modes de réalisation de la divulgation concernent des procédés de dépôt de tungstène. Certains modes de réalisation de la divulgation concernent des procédés de dépôt de tungstène qui sont réalisés à des températures relativement basses. Certains modes de réalisation de la divulgation concernent des procédés dans lesquels le rapport entre les gaz réactifs est régulé. Certains modes de réalisation de la divulgation concernent le dépôt sélectif de tungstène. Certains modes de réalisation de la divulgation concernent des procédés de dépôt de films de tungstène à basse température avec une rugosité, une contrainte et des niveaux d'impuretés relativement faibles.
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