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1. WO2022005534 - METHOD OF IMPROVING READ CURRENT STABILITY IN ANALOG NON-VOLATILE MEMORY BY PROGRAM ADJUSTMENT FOR MEMORY CELLS EXHIBITING RANDOM TELEGRAPH NOISE

Publication Number WO/2022/005534
Publication Date 06.01.2022
International Application No. PCT/US2021/017007
International Filing Date 08.02.2021
IPC
G11C 11/56 2006.1
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
G11C 16/34 2006.1
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
G11C 16/12 2006.1
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
10Programming or data input circuits
12Programming voltage switching circuits
G11C 7/02 2006.1
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
7Arrangements for writing information into, or reading information out from, a digital store
02with means for avoiding parasitic signals
Applicants
  • SILICON STORAGE TECHNOLOGY, INC. [US]/[US]
Inventors
  • MARKOV, Viktor
  • KOTOV, Alexander
Agents
  • LIMBACH, Alan
Priority Data
16/915,28929.06.2020US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF IMPROVING READ CURRENT STABILITY IN ANALOG NON-VOLATILE MEMORY BY PROGRAM ADJUSTMENT FOR MEMORY CELLS EXHIBITING RANDOM TELEGRAPH NOISE
(FR) PROCÉDÉ D'AMÉLIORATION DE LA STABILITÉ DE COURANT DE LECTURE DANS UNE MÉMOIRE NON VOLATILE ANALOGIQUE PAR RÉGLAGE DE PROGRAMME POUR DES CELLULES DE MÉMOIRE PRÉSENTANT UN BRUIT DE TÉLÉGRAPHE ALÉATOIRE
Abstract
(EN) A method and device for programming a non-volatile memory cell, where the non-volatile memory cell includes a first gate. The non-volatile memory cell is programmed to an initial program state that corresponds to meeting or exceeding a target threshold voltage for the first gate of the non-volatile memory cell. The target threshold voltage corresponds to a target read current. The non-volatile memory cell is read in a first read operation using a read voltage applied to the first gate of the non-volatile memory cell that is less than the target threshold voltage to generate a first read current. The non-volatile memory cell is subjected to additional programming in response to determining that the first read current is greater than the target read current.
(FR) Procédé et dispositif de programmation d'une cellule de mémoire non volatile, la cellule de mémoire non volatile comprenant une première grille. La cellule de mémoire non volatile est programmée à un état de programme initial qui correspond à la satisfaction ou au dépassement d'une tension de seuil cible pour la première grille de la cellule de mémoire non volatile. La tension de seuil cible correspond à un courant de lecture cible. La cellule de mémoire non volatile est lue dans une première opération de lecture au moyen d'une tension de lecture appliquée à la première grille de la cellule de mémoire non volatile qui est inférieure à la tension de seuil cible afin de générer un premier courant de lecture. La cellule de mémoire non volatile est soumise à une programmation supplémentaire en réponse à la détermination selon laquelle le premier courant de lecture est supérieur au courant de lecture cible.
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