Processing

Please wait...

PATENTSCOPE will be unavailable a few hours for maintenance reason on Tuesday 25.01.2022 at 9:00 AM CET
Settings

Settings

Goto Application

1. WO2022005183 - POWER MODULE

Publication Number WO/2022/005183
Publication Date 06.01.2022
International Application No. PCT/KR2021/008216
International Filing Date 30.06.2021
IPC
H01L 23/373 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
373Cooling facilitated by selection of materials for the device
H01L 23/15 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
14characterised by the material or its electrical properties
15Ceramic or glass substrates
H01L 23/13 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
13characterised by the shape
H01L 23/482 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
482consisting of lead-in layers inseparably applied to the semiconductor body
H01L 23/29 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
29characterised by the material
H01L 23/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
Applicants
  • 주식회사 아모센스 AMOSENSE CO., LTD. [KR]/[KR]
Inventors
  • 조태호 CHO, Taeho
  • 여인태 YEO, Intae
  • 빈진혁 BIN, Jinhyuck
  • 박승곤 PARK, Seunggon
  • 이지형 LEE, Jihyung
Agents
  • 김철진 KIM, Churchill
Priority Data
10-2020-008228703.07.2020KR
10-2020-009133923.07.2020KR
10-2020-009287927.07.2020KR
Publication Language Korean (ko)
Filing Language Korean (KO)
Designated States
Title
(EN) POWER MODULE
(FR) MODULE D'ALIMENTATION
(KO) 파워모듈
Abstract
(EN) The present invention relates to a power module comprising: a lower ceramic substrate (200) including a ceramic base material (201) and metal layers (202, 203) formed on the top surface and the bottom surface of the ceramic base material (201); a heat-dissipation plate (500) bonded to the bottom surface of the lower ceramic substrate (200); and a solder preform layer (550) disposed between and bonded to the bottom surface of the lower ceramic substrate (200) and the top surface of the heat-dissipation plate (500). The present invention has the following advantageous effects: the entrapment of volatile material is minimized due to the solder preform used when the heat-dissipation plate and the ceramic substrate are bonded to each other, thereby preventing air bubble generation; and the high-temperature reliability can be improved due to the Sb based-solder used as the solder preform.
(FR) La présente invention concerne un module de puissance comprenant : un substrat céramique inférieur (200) doté d'un matériau de base céramique (201) et de couches métalliques (202, 203) formées sur la surface supérieure et la surface inférieure du matériau de base céramique (201) ; une plaque de dissipation de chaleur (500) liée à la surface inférieure du substrat céramique inférieur (200) ; et une couche de préforme de brasure (550) disposée entre la surface inférieure du substrat céramique inférieur (200) et la surface supérieure de la plaque de dissipation thermique (500) et liée à celles-ci. La présente invention présente les effets avantageux suivants : le piégeage de matière volatile est réduit au minimum en raison de la préforme de brasure utilisée lorsque la plaque de dissipation de chaleur et le substrat en céramique sont liés l'un à l'autre, ce qui permet d'empêcher ainsi la génération de bulles d'air ; et la fiabilité à haute température peut être améliorée en raison de la brasure à base de Sb utilisée en tant que préforme de brasure.
(KO) 본 발명은 파워모듈에 관한 것으로, 세라믹기재(201)와 상기 세라믹기재(201)의 상면과 하면에 형성된 금속층(202,203)을 포함하는 하부 세라믹기판(200)과 상기 하부 세라믹기판(200)의 하면에 접합되는 방열판(500)과 상기 하부 세라믹기판(200)의 하면과 상기 방열판(500)의 상면 사이에 접합 배치된 솔더프리폼층(550)을 포함한다. 본 발명은 방열판과 세라믹기판의 접합시 솔더프리폼을 사용하므로 휘발성 물질의 갇힘을 최소화하여 기포 발생을 방지할 수 있으며, 솔더프리폼으로 Sb계열의 솔더를 사용하므로 고온 신뢰성을 향상시킬 수 있는 이점이 있다.
Latest bibliographic data on file with the International Bureau