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1. WO2022004838 - THIN-FILM TRANSISTOR

Publication Number WO/2022/004838
Publication Date 06.01.2022
International Application No. PCT/JP2021/024918
International Filing Date 01.07.2021
IPC
H01L 29/786 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 21/316 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
316composed of oxides or glassy oxides or oxide-based glass
H01L 21/336 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
Applicants
  • 日新電機株式会社 NISSIN ELECTRIC CO., LTD. [JP]/[JP]
Inventors
  • 酒井 敏彦 SAKAI, Toshihiko
  • 安東 靖典 ANDO, Yasunori
Priority Data
2020-11376601.07.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) THIN-FILM TRANSISTOR
(FR) TRANSISTOR À COUCHE MINCE
(JA) 薄膜トランジスタ
Abstract
(EN) The present invention provides, at a low cost, a thin-film transistor in which an oxide semiconductor is used as the channel layer, wherein a high reliability is obtained. A bottom-gate-type thin-film transistor in which a gate electrode, a gate insulation layer, a channel layer made of an oxide semiconductor, and a channel protection layer for protecting the surface of the channel layer are stacked in the sequence listed on a substrate, the channel protection layer being constituted from a fluorine-containing silicon oxide film, and the fluorine-containing silicon oxide film being such that the O/Si ratio, which is the ratio of the number of O atoms (at%) relative to the number of Si atoms (at%), is 1.94 or above.
(FR) La présente invention concerne, à faible coût, un transistor à couche mince dans lequel un semi-conducteur à oxyde est utilisé en tant que couche de canal, une fiabilité élevée étant obtenue. L'invention porte sur un transistor à couche mince de type à grille inférieure dans lequel une électrode de grille, une couche d'isolation de grille, une couche de canal constituée d'un semi-conducteur à oxyde et une couche de protection de canal destinée à protéger la surface de la couche de canal sont empilées dans la séquence énumérée sur un substrat, la couche de protection de canal étant constituée d'un film d'oxyde de silicium contenant du fluor, et le film d'oxyde de silicium contenant du fluor étant tel que le rapport O/Si, qui est le rapport du nombre d'atomes O (en %) par rapport au nombre d'atomes Si (en %), est de 1,94 ou plus.
(JA) チャネル層として酸化物半導体を用いるものにおいて、高い信頼性を有する薄膜トランジスタを低コストで提供する。基板上に、ゲート電極と、ゲート絶縁層と、酸化物半導体から成るチャネル層と、前記チャネル層の表面を保護するチャネル保護層とがこの順に積層されたボトムゲート型の薄膜トランジスタであって、前記チャネル保護層がフッ素を含有するシリコン酸化膜から構成されており、前記フッ素を含有するシリコン酸化膜は、Si原子数(at%)に対するO原子数(at%)の比であるO/Si比が1.94以上である薄膜トランジスタ。
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