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1. WO2022004445 - IMAGING ELEMENT, IMAGING DEVICE, AND ELECTRONIC EQUIPMENT

Publication Number WO/2022/004445
Publication Date 06.01.2022
International Application No. PCT/JP2021/023307
International Filing Date 21.06.2021
IPC
H01L 27/146 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
G01S 7/481 2006.1
GPHYSICS
01MEASURING; TESTING
SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
7Details of systems according to groups G01S13/, G01S15/, G01S17/127
48of systems according to group G01S17/58
481Constructional features, e.g. arrangements of optical elements
G01S 17/36 2006.1
GPHYSICS
01MEASURING; TESTING
SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
17Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
02Systems using the reflection of electromagnetic waves other than radio waves
06Systems determining position data of a target
08for measuring distance only
32using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
36with phase comparison between the received signal and the contemporaneously transmitted signal
G01S 17/894 2020.1
GPHYSICS
01MEASURING; TESTING
SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
17Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
88Lidar systems, specially adapted for specific applications
89for mapping or imaging
8943D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
H04N 5/369 2011.1
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
Applicants
  • ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP]/[JP]
Inventors
  • 山岸 肇 YAMAGISHI Hajime
  • 日田 聖大 HIDA Shota
Agents
  • 西川 孝 NISHIKAWA Takashi
  • 稲本 義雄 INAMOTO Yoshio
  • 三浦 勇介 MIURA Yusuke
Priority Data
2020-11568703.07.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) IMAGING ELEMENT, IMAGING DEVICE, AND ELECTRONIC EQUIPMENT
(FR) ÉLÉMENT D'IMAGERIE, DISPOSITIF D'IMAGERIE ET ÉQUIPEMENT ÉLECTRONIQUE
(JA) 撮像素子、撮像装置、電子機器
Abstract
(EN) The present invention pertains to an imaging element, an imaging device, and electronic equipment which make it possible to reduce wiring capacity and resistance. The present invention is provided with: a semiconductor layer having arranged therein, in a matrix manner, pixels each including a photodiode, a first transfer transistor that transfers a charge generated by the photodiode to a first charge storage part, and a second transfer transistor that transfers a charge generated by the photodiode to a second charge storage part; and a wire layer layered on the semiconductor layer. On a second surface side of the wire layer opposite to a first surface on which the semiconductor layer is layered, a first wire is provided which has connected thereto the first transfer transistors of multiple pixels, of the pixels arranged in a matrix manner, arranged in a row direction or in a column direction, and a second wire is provided which has connected thereto the second transfer transistors of multiple pixels. The present invention can be applied to, for example, an imaging element which carries out ranging.
(FR) La présente invention concerne un élément d'imagerie, un dispositif d'imagerie et un équipement électronique qui permettent de réduire la capacité de câblage et la résistance. La présente invention comprend : une couche semi-conductrice dans laquelle sont disposés, sous la forme d'une matrice, des pixels comprenant chacun une photodiode, un premier transistor de transfert qui transfère une charge générée par la photodiode à une première partie de stockage de charge, et un second transistor de transfert qui transfère une charge générée par la photodiode à une seconde partie de stockage de charge ; et une couche de fils stratifiée sur la couche semi-conductrice. Sur un côté d'une seconde surface de la couche de fils opposé à une première surface sur laquelle la couche semi-conductrice est stratifiée, un premier fil est disposé, auquel sont connectés les premiers transistors de transfert de multiples pixels, des pixels disposés sous la forme d'une matrice, disposés dans une direction de rangée ou dans une direction de colonne, et un second fil est disposé, auquel sont connectés les seconds transistors de transfert de multiples pixels. La présente invention peut être appliquée, par exemple, à un élément d'imagerie qui exécute une télémétrie.
(JA) 本技術は、配線容量や抵抗を低減させることができるようにする撮像素子、撮像装置、電子機器に関する。 フォトダイオードと、フォトダイオードで生成された電荷を第1の電荷蓄積部に転送する第1の転送トランジスタと、フォトダイオードで生成された電荷を第2の電荷蓄積部に転送する第2の転送トランジスタとを含む画素が、行列状に配置されている半導体層と、半導体層に積層されている配線層とを備え、前記配線層の前記半導体層が積層されている第1の面と対向する第2の面側に、行列状に配置されている画素のうちの、行方向または列方向に配置されている複数の画素の第1の転送トランジスタが接続されている第1の配線と、複数の画素の第2の転送トランジスタが接続されている第2の配線とを備える。本技術は、例えば測距を行う撮像素子に適用できる。
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