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1. WO2022004293 - BONDED SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD FOR BONDED SEMICONDUCTOR ELEMENT

Publication Number WO/2022/004293
Publication Date 06.01.2022
International Application No. PCT/JP2021/021656
International Filing Date 08.06.2021
IPC
H01L 31/18 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 33/22 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 21/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/338 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
338with a Schottky gate
H01L 29/812 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
80with field effect produced by a PN or other rectifying junction gate
812with a Schottky gate
Applicants
  • 信越半導体株式会社 SHIN-ETSU HANDOTAI CO., LTD. [JP]/[JP]
Inventors
  • 石崎 順也 ISHIZAKI Junya
Agents
  • 好宮 幹夫 YOSHIMIYA Mikio
  • 小林 俊弘 KOBAYASHI Toshihiro
  • 大塚 徹 OTSUKA Toru
Priority Data
2020-11560803.07.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) BONDED SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD FOR BONDED SEMICONDUCTOR ELEMENT
(FR) ÉLÉMENT SEMI-CONDUCTEUR LIÉ ET PROCÉDÉ DE FABRICATION D'ÉLÉMENT SEMI-CONDUCTEUR LIÉ
(JA) 接合型半導体素子及び接合型半導体素子の製造方法
Abstract
(EN) The present invention is a bonded semiconductor element in which an epitaxial layer and a support substrate of a material different from that of the epitaxial layer have been bonded, said bonded semiconductor element being characterized in that one of the epitaxial layer and the support substrate has a radial pattern composed of recesses or protrusions that widen out radially from an given center point on a bonding surface. It is thus possible to provide a bonded semiconductor element in which separation and fracturing due to increases and decreases in temperature can be suppressed.
(FR) La présente invention est un élément semi-conducteur lié dans lequel une couche épitaxiale et un substrat de support constitué d'un matériau différent de celui de la couche épitaxiale ont été liés, ledit élément semi-conducteur lié étant caractérisé en ce que la couche épitaxiale ou le substrat de support a un motif radial composé de creux ou de saillies qui s'élargissent radialement à partir d'un point central donné sur une surface de liaison. Il est ainsi possible de fournir un élément semi-conducteur lié dans lequel la séparation et la fracturation dues à des augmentations et à des diminutions de température peuvent être supprimées.
(JA) 本発明は、エピタキシャル層と該エピタキシャル層とは異なる材料の支持基板とが接合された接合型半導体素子であって、前記エピタキシャル層及び前記支持基板の何れか一方が、接合面に任意の点を中心として放射状に広がっている凹部または凸部からなる放射状パターンを有するものであることを特徴とする接合型半導体素子である。これにより、温度の上昇・下降による剥離や破壊の発生を抑制できる接合型半導体素子を提供できる。
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