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1. WO2022004172 - IMAGING DEVICE AND ELECTRONIC APPARATUS

Publication Number WO/2022/004172
Publication Date 06.01.2022
International Application No. PCT/JP2021/019021
International Filing Date 19.05.2021
IPC
H01L 31/107 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
107the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/10 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H01L 27/146 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/369 2011.1
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
Applicants
  • ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP]/[JP]
Inventors
  • 山口 鉄也 YAMAGUCHI Tetsuya
Agents
  • 田中 秀▲てつ▼ TANAKA Hidetetsu
  • 小林 龍 KOBAYASHI Toru
  • 森 哲也 MORI Tetsuya
Priority Data
2020-11166429.06.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) IMAGING DEVICE AND ELECTRONIC APPARATUS
(FR) DISPOSITIF D'IMAGERIE ET APPAREIL ÉLECTRONIQUE
(JA) 撮像装置及び電子機器
Abstract
(EN) Provided are an imaging device and an electronic apparatus capable of suppressing a degradation in characteristics. The imaging device comprises: an N-type first semiconductor region; a P-type second semiconductor region that is in contact with one surface of the first semiconductor region; a light absorption region that is provided on a side opposite to the first semiconductor region with the second semiconductor region therebetween; and an anode electrode that is provided at a position facing the second semiconductor region with the light absorption region therebetween. The anode electrode is made of a P-type semiconductor having a refractive index of 1.8 or more and an optical bandgap of 1.9 eV or more.
(FR) Dispositif d'imagerie et appareil électronique pouvant supprimer une dégradation de caractéristiques. Le dispositif d'imagerie comprend : une première région semi-conductrice de type N; une seconde région semi-conductrice de type P qui est en contact avec une surface de la première région semi-conductrice; une région d'absorption de lumière qui est disposée sur un côté opposé à la première région semi-conductrice, avec la seconde région semi-conductrice entre celles-ci; et une électrode d'anode qui est disposée à une position faisant face à la seconde région semi-conductrice, avec la région d'absorption de lumière entre celles-ci. L'électrode d'anode est constituée d'un semi-conducteur de type P présentant un indice de réfraction de 1,8 ou plus et une bande interdite optique de 1,9 eV ou plus.
(JA) 特性の低下を抑制できるようにした撮像装置及び電子機器を提供する。撮像装置は、N型の第1半導体領域と、第1半導体領域の一方の面に接するP型の第2半導体領域と、第2半導体領域を挟んで第1半導体領域の反対側に設けられた光吸収領域と、光吸収領域を挟んで第2半導体領域と向かい合う位置に設けられたアノード電極と、を備える。アノード電極は、屈折率が1.8以上であり、光学的バンドギャップが1.9eV以上のP型半導体で構成されている。
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