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1. WO2022004150 - SYNTHETIC SINGLE-CRYSTAL DIAMOND AND MANUFACTURING METHOD THEREOF

Publication Number WO/2022/004150
Publication Date 06.01.2022
International Application No. PCT/JP2021/018372
International Filing Date 14.05.2021
IPC
C30B 29/04 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
04Diamond
C01B 32/26 2017.1
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
32Carbon; Compounds thereof
25Diamond
26Preparation
C30B 9/10 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
9Single-crystal growth from melt solutions using molten solvents
04by cooling of the solution
08using other solvents
10Metal solvents
C30B 33/04 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
33After-treatment of single crystals or homogeneous polycrystalline material with defined structure
04using electric or magnetic fields or particle radiation
CPC
C01B 32/26
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
32Carbon; Compounds thereof
25Diamond
26Preparation
C30B 29/04
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
04Diamond
C30B 33/04
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
33After-treatment of single crystals or homogeneous polycrystalline material with defined structure
04using electric or magnetic fields or particle radiation
C30B 9/10
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
9Single-crystal growth from melt solutions using molten solvents
04by cooling of the solution
08using other solvents
10Metal solvents
Applicants
  • 住友電気工業株式会社 SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP]/[JP]
Inventors
  • 角谷 均 SUMIYA, Hitoshi
  • 李 真和 LEE, Jin Hwa
  • 寺本 三記 TERAMOTO, Minori
Agents
  • 特許業務法人深見特許事務所 FUKAMI PATENT OFFICE, P.C.
Priority Data
2020-11305330.06.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SYNTHETIC SINGLE-CRYSTAL DIAMOND AND MANUFACTURING METHOD THEREOF
(FR) DIAMANT SYNTHÉTIQUE MONOCRISTALLIN ET SON PROCÉDÉ DE FABRICATION
(JA) 合成単結晶ダイヤモンド及びその製造方法
Abstract
(EN) This synthetic single-crystal diamond contains nitrogen atoms at a concentration of 100-1500 ppm based on the number of atoms, and includes aggregates formed from one vacancy and three substitutional nitrogen atoms present adjacent to the vacancy, wherein the Raman shift λ'cm-1 of a peak in the first-order Raman scattering spectrum of the aforementioned synthetic single-crystal diamond, and the Raman shift λ'cm-1 of a peak in the first-order Raman scattering spectrum of a synthetic, type IIa single-crystal diamond that contains nitrogen atoms at a concentration of less than or equal to 1 ppm based on the number of atoms, satisfy formula 1 below. Formula 1 λ’ – λ ≥ 0
(FR) Diamant synthétique monocristallin contenant des atomes d'azote à une concentration comprise entre 100 et 1 500 ppm par rapport au nombre d'atomes, et comprenant des agrégats formés à partir d'une lacune et de trois atomes d'azote de substitution présents à proximité de la lacune, le décalage Raman λ'cm-1 d'un pic dans le spectre de diffusion Raman de premier ordre du diamant synthétique monocristallin mentionné ci-dessus, et le décalage Raman λ'cm-1 d'un pic dans le spectre de diffusion Raman de premier ordre d'un diamant synthétique monocristallin de type IIa qui contient des atomes d'azote à une concentration inférieure ou égale à 1 ppm par rapport au nombre d'atomes, satisfont la formule (1) ci-dessous. Formule (1) λ' – λ ≥ 0
(JA) 窒素原子を原子数基準で100ppm以上1500ppm以下の濃度で含む合成単結晶ダイヤモンドであって、前記合成単結晶ダイヤモンドは、1つの空孔と、前記空孔に隣接して存在する3つの置換型窒素原子と、からなる凝集体を含み、前記合成単結晶ダイヤモンドの1次ラマン散乱スペクトルにおけるピークのラマンシフトλ'cm-1と、窒素原子を原子数基準で1ppm以下の濃度で含む合成IIa型単結晶ダイヤモンドの1次ラマン散乱スペクトルにおけるピークのラマンシフトλcm-1とは、下記式1の関係を示す、 λ'-λ≧0 式1 合成単結晶ダイヤモンドである。
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