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1. WO2022004084 - SEMICONDUCTOR DEVICE

Publication Number WO/2022/004084
Publication Date 06.01.2022
International Application No. PCT/JP2021/014138
International Filing Date 01.04.2021
IPC
H01L 29/78 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 29/06 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/12 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
H01L 29/739 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70Bipolar devices
72Transistor-type devices, i.e. able to continuously respond to applied control signals
739controlled by field effect
H01L 29/861 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
H01L 29/868 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
868PIN diodes
Applicants
  • 富士電機株式会社 FUJI ELECTRIC CO., LTD. [JP]/[JP]
Inventors
  • 三塚 要 MITSUZUKA Kaname
  • 唐本 祐樹 KARAMOTO Yuki
Agents
  • 龍華国際特許業務法人 RYUKA IP LAW FIRM
Priority Data
2020-11575903.07.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置
Abstract
(EN) Provided is a semiconductor device comprising a gate trench part and a dummy trench part adjacent to the gate trench part. The semiconductor device may be provided with: a first conductive-type drift region provided on a semiconductor substrate; a second conductive-type base region provided above the drift region; a first conductive-type emitter region, which is provided above the base region and has a higher doping concentration than the drift region; and a second conductive contact region, which is provided above the base region and has a higher doping concentration than the base region. In a mesa part between the gate trench part and the dummy trench part, the contact region may be provided below the lower end of the emitter region on the dummy trench part side.
(FR) La présente invention concerne un dispositif à semi-conducteur comprenant une partie de tranchée de grille et une partie de tranchée factice adjacente à la partie de tranchée de grille Le dispositif à semi-conducteur peut comprendre : une première région de dérive de type conductive disposée sur un substrat à semi-conducteur ; une seconde région de base de type conductive disposée au-dessus de la région de dérive ; une première région d'émetteur de type conductive, qui est disposée au-dessus de la région de base et a une concentration de dopage supérieure à celle de la région de dérive ; et une seconde région de contact conductive, qui est disposée au-dessus de la région de base et a une concentration de dopage supérieure à celle de la région de base. Dans une partie mésa entre la partie de tranchée de grille et la partie de tranchée factice, la région de contact peut être disposée au-dessous de l'extrémité inférieure de la région d'émetteur sur le côté de la partie de tranchée factice.
(JA) ゲートトレンチ部と、ゲートトレンチ部に隣接するダミートレンチ部と、を備える半導体装置を提供する。半導体装置は半導体基板に設けられた第1導電型のドリフト領域と、ドリフト領域の上方に設けられた第2導電型のベース領域と、ベース領域の上方に設けられ、ドリフト領域よりもドーピング濃度の高い第1導電型のエミッタ領域と、ベース領域の上方に設けられ、ベース領域よりもドーピング濃度の高い第2導電型のコンタクト領域と、を備えてよい。ゲートトレンチ部とダミートレンチ部との間のメサ部において、コンタクト領域は、エミッタ領域のダミートレンチ部側の下端の下方に設けられてよい。
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