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1. WO2022003957 - ACCUMULATION APPARATUS AND NEUROMORPHIC DEVICE

Publication Number WO/2022/003957
Publication Date 06.01.2022
International Application No. PCT/JP2020/026216
International Filing Date 03.07.2020
IPC
H01L 29/82 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
82controllable by variation of the magnetic field applied to the device
G06G 7/60 2006.1
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
GANALOGUE COMPUTERS
7Devices in which the computing operation is performed by varying electric or magnetic quantities
48Analogue computers for specific processes, systems, or devices, e.g. simulators
60for living beings, e.g. their nervous systems
G06N 3/063 2006.1
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
NCOMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
3Computer systems based on biological models
02using neural network models
06Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
063using electronic means
G11C 11/16 2006.1
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
Applicants
  • TDK株式会社 TDK CORPORATION [JP]/[JP]
Inventors
  • 山田 章悟 YAMADA Shogo
  • 柴田 竜雄 SHIBATA Tatsuo
  • 佐々木 智生 SASAKI Tomoyuki
Agents
  • 棚井 澄雄 TANAI Sumio
  • 荒 則彦 ARA Norihiko
  • 飯田 雅人 IIDA Masato
  • 荻野 彰広 OGINO Akihiro
Priority Data
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) ACCUMULATION APPARATUS AND NEUROMORPHIC DEVICE
(FR) APPAREIL D'ACCUMULATION ET DISPOSITIF NEUROMORPHIQUE
(JA) 集積装置及びニューロモーフィックデバイス
Abstract
(EN) An accumulation apparatus (200) according to an embodiment of the present invention comprises a substrate (Sb) and a laminate structure (LS) that is laminated on the substrate. The laminate structure is provided with a first element group (101) disposed in a first layer (L1), and a second element group (102) disposed in a second layer (L2) different from the first layer. Each of the first and second element groups includes a plurality of magnetic elements. The substrate has a plurality of switching elements (SW1, SW2) that control the plurality of magnetic elements belonging to the respective first and second element groups.
(FR) Un appareil d'accumulation (200) selon un mode de réalisation de la présente invention comprend un substrat (Sb) et une structure stratifiée (LS) qui est stratifiée sur le substrat. La structure stratifiée est pourvue d'un premier groupe d'éléments (101) disposé dans une première couche (L1), et d'un second groupe d'éléments (102) disposé dans une seconde couche (L2) différente de la première couche. Chacun des premier et second groupes d'éléments comprend une pluralité d'éléments magnétiques. Le substrat comporte une pluralité d'éléments de commutation (SW1, SW2) qui commandent la pluralité d'éléments magnétiques appartenant aux premier et second groupes d'éléments respectifs.
(JA) 本実施形態にかかる集積装置(200)は、基板(Sb)と、前記基板上に積層された積層構造体(LS)と、を備え、前記積層構造体は、第1階層(L1)に配置された第1素子群(101)と、前記第1階層と異なる第2階層(L2)に配置された第2素子群(102)と、を備え、前記第1素子群及び前記第2素子群はそれぞれ、複数の磁気素子を含み、前記基板は、前記第1素子群及び前記第2素子群のそれぞれに属する前記複数の磁気素子を制御する複数のスイッチング素子(SW1, SW2)を有する。
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