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1. WO2022003803 - ETCHING METHOD AND ETCHING DEVICE

Publication Number WO/2022/003803
Publication Date 06.01.2022
International Application No. PCT/JP2020/025609
International Filing Date 30.06.2020
IPC
H01L 21/3065 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/302 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
CPC
H01J 37/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
H01J 37/32449
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
3244Gas supply means
32449Gas control, e.g. control of the gas flow
H01J 37/32724
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
32715Workpiece holder
32724Temperature
H01L 21/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/02178
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02172the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
02175characterised by the metal
02178the material containing aluminium, e.g. Al2O3
H01L 21/302
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Applicants
  • 株式会社日立ハイテク HITACHI HIGH-TECH CORPORATION [JP]/[JP]
Inventors
  • 大竹 浩人 OTAKE Hiroto
  • 服部 孝司 HATTORI Takashi
Agents
  • 井上 雄 INOUE Takeshi
Priority Data
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) ETCHING METHOD AND ETCHING DEVICE
(FR) PROCÉDÉ DE GRAVURE ET DISPOSITIF DE GRAVURE
(JA) エッチング処理方法およびエッチング処理装置
Abstract
(EN) Provided are an etching method and etching device that enable etching of aluminum oxide films with a high selectivity ratio with respect to silicon oxide films and silicon nitride films, the method comprising a step for placing, in a treatment chamber, a wafer having an aluminum oxide film disposed on an upper surface thereof, maintaining the wafer at a temperature of -20°C or lower, and etching the aluminum oxide film by feeding thereto, for a predetermined period of time, a vapor of hydrogen fluoride from a plurality of through holes formed apart from each other at a predetermined interval in a plate-shaped member disposed above the upper surface of the wafer.
(FR) L'invention concerne un procédé de gravure et un dispositif de gravure qui permettent la gravure de films d'oxyde d'aluminium avec un rapport de sélectivité élevé par rapport aux films d'oxyde de silicium et aux films de nitrure de silicium, le procédé comprenant une étape de mise en place, dans une chambre de traitement, une tranche ayant un film d'oxyde d'aluminium disposé sur une surface supérieure de celle-ci, le maintien de la tranche à une température de -20 °C ou moins, et la gravure du film d'oxyde d'aluminium par alimentation de celui-ci, pendant une durée prédéterminée, avec une vapeur de fluorure d'hydrogène provenant d'une pluralité de trous traversants formés séparément les uns des autres à un intervalle prédéterminé dans un élément en forme de plaque disposé au-dessus de la surface supérieure de la tranche.
(JA) 酸化アルミニウム膜を酸化シリコン膜及び窒化シリコン膜に対して高い選択比で高精度にエッチングすることのできるエッチング処理方法およびエッチング処理装置を提供するため、酸化アルミニウム膜が上面に配置されたウエハを処理室内に配置し、当該ウエハを-20℃以下の温度に維持して、前記ウエハの前記上面の上方に所定の隙間を開けて配置された板状の部材の複数の貫通孔からフッ化水素の蒸気を予め定められた期間だけ供給して前記酸化アルミニウム膜をエッチングする工程を備えた。
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