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1. WO2022002896 - OPTOELECTRONIC DEVICE AND CORRESPONDING MANUFACTURING METHOD

Publication Number WO/2022/002896
Publication Date 06.01.2022
International Application No. PCT/EP2021/067780
International Filing Date 29.06.2021
IPC
H01L 27/15 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/00 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 33/18 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
16with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
18within the light emitting region
H01L 33/32 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
H01L 33/06 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
04with a quantum effect structure or superlattice, e.g. tunnel junction
06within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/08 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
08with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
CPC
H01L 27/156
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
153in a repetitive configuration, e.g. LED bars
156two-dimensional arrays
H01L 2933/0083
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0083Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
H01L 33/007
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
0066with a substrate not being a III-V compound
007comprising nitride compounds
H01L 33/0093
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0093Wafer bonding; Removal of the growth substrate
H01L 33/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
04with a quantum effect structure or superlattice, e.g. tunnel junction
06within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
08with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
Applicants
  • ALEDIA [FR]/[FR]
Inventors
  • AMSTATT, Benoît
  • TCHOULFIAN, Pierre
  • NAPIERALA, Jérôme
Agents
  • DECOBERT, Jean-Pascal
Priority Data
200690430.06.2020FR
Publication Language French (fr)
Filing Language French (FR)
Designated States
Title
(EN) OPTOELECTRONIC DEVICE AND CORRESPONDING MANUFACTURING METHOD
(FR) DISPOSITIF OPTOÉLECTRONIQUE ET PROCÉDÉ DE FABRICATION CORRESPONDANT
Abstract
(EN) Disclosed is a method for manufacturing an optoelectronic device comprising a substrate (1) and, on a first face of the substrate (1), at least one stack (3), in a longitudinal direction (z), of at least one injection layer (30) for injecting a first type of carrier and an active layer (31), the method comprising: - providing the substrate (1), - forming a growth mask (2) on the first face of the substrate (1), the growth mask (2) comprising at least one opening (20, 20') in the longitudinal direction (z) through which the first face is exposed, - forming, from the exposed area of the substrate (1), the injection layer (30) for injecting the first type of carrier in the at least one opening (20, 20'), - forming the active layer (31) on the injection layer (30), in the at least one opening (20, 20'), such that the active layer (31) is confined within the at least one opening (20, 20') and does not extend out of the at least one opening. Also described is the corresponding optoelectronic device, which therefore comprises an active layer (31) confined within an opening (20, 20') of the growth mask (2).
(FR) Procédé de fabrication d'un dispositif optoélectronique comprenant un substrat (1) et, sur une première face du substrat (1), au moins un empilement (3), selon une direction longitudinale (z), d'au moins une couche (30) d'injection d'un premier type de porteurs et une couche active (31), ledit procédé comprenant : - fourniture du substrat (1), - formation d'un masque de croissance (2) sur la première face du substrat (1), ledit masque de croissance (2) comprenant au moins une ouverture (20, 20') selon la direction longitudinale (z) au travers de laquelle est exposée la première face, - formation, à partir de la zone exposée du substrat (1), de la couche (30) d'injection du premier type de porteurs au sein de l'au moins une ouverture (20, 20'), - formation de la couche active (31) sur ladite couche (30) d'injection, au sein de l'au moins une ouverture (20, 20'), de sorte que ladite couche active (31) soit confinée dans l'au moins une ouverture (20, 20') et ne s'étende pas en dehors de ladite au moins une ouverture. Est également décrit, le dispositif optoélectronique correspondant qui comprend donc une couche active (31) confinée dans une ouverture (20, 20') du masque de croissance (2).
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