Processing

Please wait...

PATENTSCOPE will be unavailable a few hours for maintenance reason on Tuesday 25.01.2022 at 9:00 AM CET
Settings

Settings

Goto Application

1. WO2022002848 - TRANSPORT RING FOR A CVD REACTOR

Publication Number WO/2022/002848
Publication Date 06.01.2022
International Application No. PCT/EP2021/067689
International Filing Date 28.06.2021
IPC
C23C 16/458 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
H01L 21/677 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
677for conveying, e.g. between different work stations
C23C 14/50 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
50Substrate holders
C23C 16/46 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
46characterised by the method used for heating the substrate
H01L 21/687 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
Applicants
  • AIXTRON SE [DE]/[DE]
Inventors
  • RUDA Y WITT, Francisco
  • KOLLBERG, Marcel
  • QUARTIER, Georg
  • RAUF, Hendrik
  • CREMER, Stefan
Agents
  • GRUNDMANN, Dirk
  • MÜLLER, Enno
  • BRÖTZ, Helmut
  • BOURREE, Hendrik
Priority Data
10 2020 117 645.703.07.2020DE
Publication Language German (de)
Filing Language German (DE)
Designated States
Title
(DE) TRANSPORTRING FÜR EINEN CVD-REAKTOR
(EN) TRANSPORT RING FOR A CVD REACTOR
(FR) BAGUE DE TRANSPORT CONÇUE POUR UN RÉACTEUR CVD
Abstract
(DE) Die Erfindung betrifft einen Transportring zum Transportieren eines Substrates (21), aufweisend einen sich um eine Achse (A) erstreckenden ringförmigen Körper (1) mit einem ringförmigen Unterteil (2), wobei das Unterteil (2) einen Außenabschnitt (6) und radial innerhalb des Außenabschnitts (6) eine Auflagefläche (5) zur Auflage eines Randes des Substrates (21) aufweist, wobei der Außenabschnitt (6) mit Distanzmitteln (7, 7') ein ringförmiges Oberteil (3) trägt, das gegenüber einem radial äußeren Bereich des Außenabschnittes (6) in einer Richtung parallel zur Achse (A) um einen Abstand (D) beabstandet ist. Erfindungsgemäß werden die Distanzmittel (7, 7') von in Umfangsrichtung um die Achse (A) voneinander beanstandeten Einzelstegen gebildet, zwischen denen sich ein beidseitig offener Spalt ausbildet. Die Fertigung der Einzelstege erfolgt beispielsweise durch Drahterosion.
(EN) The invention relates to a transport ring for transporting a substrate (21), having an annular body (1) extending around an axis (A), with an annular lower part (2), the lower part (2) having an outer portion (6) and, radially inside the outer portion (6), a support surface (5) for supporting an edge of the substrate (21), the outer portion (6) carrying, with spacers (7, 7'), an annular upper part (3) which is distanced from a radially outer region of the outer portion (6) in a direction parallel to the axis (A) by a distance (D). According to the invention, the spacers (7, 7') are formed by individual ribs distanced from one another about the axis (A) in the circumferential direction, between which there is formed a gap which is open on both sides. The individual ribs are produced, for example, by wire erosion.
(FR) L’invention concerne une bague de transport conçue pour transporter un substrat (21) comprenant un corps (21) annulaire s’étendant autour d’un axe (A), qui comporte une partie inférieure (2) annulaire, cette partie inférieure (2) comportant zone externe (6) et, radialement à l’intérieur de cette zone externe (6), une surface d’appui (5) servant à supporter un bord du substrat (21), ladite zone externe (6) portant, à l’aide de moyens d’espacement (7, 7'), une partie supérieure (3) annulaire qui est espacée d’une distance (D) par rapport à une zone radialement à l’extérieur de la zone externe (6) dans une direction parallèle à l’axe (A). Selon l’invention, les moyens d’espacement (7, 7') sont formés par des éléments de liaison individuels espacés les uns des autres autour de l’axe (A) dans la direction circonférentielle, entre lesquels un interstice ouvert est formé de part et d’autre. La production des éléments de liaison individuels intervient par exemple par électroérosion à fil.
Related patent documents
Latest bibliographic data on file with the International Bureau