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1. WO2022002777 - BACK-PUMPED SEMICONDUCTOR MEMBRANE LASER

Publication Number WO/2022/002777
Publication Date 06.01.2022
International Application No. PCT/EP2021/067461
International Filing Date 25.06.2021
IPC
H01S 5/14 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
14External cavity lasers
H01S 5/024 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
024Cooling arrangements
H01S 5/183 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
18Surface-emitting lasers
183having a vertical cavity
H01S 5/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
H01S 5/343 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers , multiple quantum well lasers or graded index separate confinement heterostructure lasers
343in AIIIBV compounds, e.g. AlGaAs-laser
H01S 3/0941 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
09Processes or apparatus for excitation, e.g. pumping
091using optical pumping
094by coherent light
0941of a semiconductor laser, e.g. of a laser diode
Applicants
  • TWENTY-ONE SEMICONDUCTORS GMBH [DE]/[DE]
Inventors
  • BEK, Roman
  • WITZ, Norbert
Agents
  • WEILNAU, Carsten
  • STURM, Dipl.-Ing. Christoph
  • FRANKE, Dr. Markus
Priority Data
10 2020 003 969.301.07.2020DE
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) BACK-PUMPED SEMICONDUCTOR MEMBRANE LASER
(FR) LASER À MEMBRANE À SEMI-CONDUCTEURS À POMPAGE ARRIÈRE
Abstract
(EN) The disclosure relates in one aspect to a semiconductor membrane laser chip (500) comprising: - a planar-shaped lasing medium (510) comprising an upper surface (511a) and comprising a lower surface (511b) opposite to the upper surface (511a), the lasing medium (510) being configured to emit electromagnetic radiation (170) at a laser wavelength λ1, - a first heat spreader (520a, 520b) bonded to one of the upper surface (511a) and the lower surface (511b) of the lasing medium (510), - a first dielectric layer (535b) arranged on the lower surface (511b) of the lasing medium (510) or arranged on a lower surface (525b) of the first heat spreader (520a, 520b) when the first heat spreader (520a, 520b) is bonded to the lower surface (511b) of the lasing medium (510), wherein the first dielectric layer (535a, 535b) is reflective for the laser wavelength λ1
(FR) Selon un aspect, la divulgation concerne une puce laser à membrane à semi-conducteurs (500) comprenant : un milieu actif de forme plane (510) comportant une surface supérieure (511a) et une surface inférieure (511b) opposée à la surface supérieure (511a), le milieu actif (510) étant configuré pour émettre un rayonnement électromagnétique (170) à une longueur d'onde laser λ1 ; un premier dissipateur thermique (520a, 520b) lié à la surface supérieure (511a) ou à la surface inférieure (511b) du milieu actif (510) ; une première couche diélectrique (535b) disposée sur la surface inférieure (511b) du milieu actif (510) ou disposée sur une surface inférieure (525b) du premier dissipateur thermique (520a, 520b) quand le premier dissipateur thermique (520a,520b) est lié à la surface inférieure (511b) du milieu laser (510), la première couche diélectrique (535a, 535b) réfléchissant la longueur d'onde laser λ1.
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