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1. WO2022002630 - OPTOELECTRONIC COMPONENT AND METHOD

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Publication Number WO/2022/002630
Publication Date 06.01.2022
International Application No. PCT/EP2021/066569
International Filing Date 18.06.2021
IPC
H01L 21/50 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
H01L 25/075 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/78
H01L 33/00 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 33/48 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
H01L 33/62 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
62Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/64 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
64Heat extraction or cooling elements
CPC
H01L 25/0753
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/00
0753the devices being arranged next to each other
H01L 2933/0033
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0033relating to semiconductor body packages
H01L 2933/0066
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0033relating to semiconductor body packages
0066relating to arrangements for conducting electric current to or from the semiconductor body
H01L 2933/0075
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0033relating to semiconductor body packages
0075relating to heat extraction or cooling elements
H01L 33/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 33/486
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
483Containers
486adapted for surface mounting
Applicants
  • AMS-OSRAM INTERNATIONAL GMBH [DE]/[DE]
Inventors
  • ZITZLSPERGER, Michael
  • SCHWARZ, Thomas
  • EIBL, Julia
  • STREITEL, Reinhard
  • HIEN, Matthias
Agents
  • SJW PATENTANWÄLTE
Priority Data
10 2020 117 207.930.06.2020DE
Publication Language German (de)
Filing Language German (DE)
Designated States
Title
(DE) OPTOELEKTRONISCHES BAUELEMENT UND VERFAHREN
(EN) OPTOELECTRONIC COMPONENT AND METHOD
(FR) COMPOSANT OPTOÉLECTRONIQUE ET PROCÉDÉ
front page image
Abstract
(DE) Die Erfindung betrifft ein Verfahren zur Herstellung eines optoelektronischen Bauelements, bei dem ein Leiterrahmen (10) mit zumindest einem ersten Abschnitt und einem davon beabstandeten zweiten Abschnitt mit jeweils wenigstens 2 ersten Auflagebereichen (14) bereitgestellt wird, wobei die ersten Auflagebereiche (14) jeweils zumindest teilweise von einer Vertiefung (11) umgeben sind. Ein lichtemittierender Halbleiterkörper (20r, 20b, 20g) wird auf den ersten Auflagebereich (14) eines jeden Abschnitts aufgebracht und die Abschnitte zur Bildung einer Vielzahl von Chipgruppen (1), insbesondere Chipgruppen (1) gleicher Bauweise getrennt. Anschließend wird ein Träger bereitgestellt, der eine Vielzahl voneinander beabstandete Bereiche aufweist, die jeweils Kontaktfinger (32) umfassen. Eine Chipgruppe (1) wird in oder auf jeweils einen der Vielzahl voneinander beabstandeten Bereiche des Trägers aufgebracht und kontaktiert. Dann werden die Bereiche vereinzelt.
(EN) The invention relates to a method for producing an optoelectronic component in which a leadframe (10) is provided, comprising at least a first portion and, at a distance therefrom, a second portion, each portion having at least 2 first supporting regions (14), wherein the first supporting regions (14) are each at least partially surrounded by a depression (11). A light-emitting semiconductor body (20r, 20b, 20g) is applied to the first supporting region (14) of each portion and the portions are separated to form a multiplicity of chip groups (1), in particular chip groups (1) of the same type of construction. Then a carrier is provided, having a multiplicity of spaced-apart regions each comprising contact fingers (32). A chip group (1) is introduced into, or applied to, in each case one of the multiplicity of spaced-apart regions of the carrier and contact is established. Then the regions are individually separated.
(FR) L'invention concerne un procédé de fabrication d'un composant optoélectronique, selon lequel une grille de connexion (10) comprenant au moins une première partie et une deuxième partie espacée de celle-ci, pourvues chacune d’au moins deux premières zones d'appui (14), est fournie, les premières zones d'appui (14) étant chacune au moins partiellement entourées d'un évidement (11). Un corps semi-conducteur électroluminescent (20r, 20b, 20g) est appliqué sur la première zone d'appui (14) de chaque partie et les parties sont séparées pour former une pluralité de groupes de puces (1), en particulier de groupes de puces (1) de même construction. Ensuite, un support est fourni, lequel comporte une pluralité de zones espacées les unes des autres qui comprennent respectivement des doigts de contact (32). Un groupe de puces (1) est appliqué dans ou sur l’une des zones espacées les unes des autres dudit support et mis en contact. Les zones sont ensuite isolées.
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