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1. WO2022002111 - SILICON CARBIDE POWER DIODE DEVICE AND FABRICATION METHOD THEREOF

Publication Number WO/2022/002111
Publication Date 06.01.2022
International Application No. PCT/CN2021/103440
International Filing Date 30.06.2021
IPC
H01L 29/872 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
872Schottky diodes
H01L 29/868 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
868PIN diodes
Applicants
  • XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD. [CN]/[CN]
Inventors
  • TAO, Yonghong
  • LIN, Zhidong
  • PENG, Zhigao
Agents
  • TEE & HOWE INTELLECTUAL PROPERTY ATTORNEYS
Priority Data
16/928,37314.07.2020US
202010626793.301.07.2020CN
202010626798.601.07.2020CN
202021269885.201.07.2020CN
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) SILICON CARBIDE POWER DIODE DEVICE AND FABRICATION METHOD THEREOF
(FR) DISPOSITIF À DIODE DE PUISSANCE EN CARBURE DE SILICIUM ET SON PROCÉDÉ DE FABRICATION
Abstract
(EN) A silicon carbide power diode device has a silicon carbide substrate on which a silicon carbide epitaxial layer with an active region is provided. A Schottky metal layer is on the active region, and a first electrode layer is on the Schottky metal layer. A first ohmic contact is on the silicon carbide substrate, and a second electrode layer is on the first ohmic contact. The active region of the silicon carbide epitaxial layer has a plurality of first P-type regions, a plurality of second P-type regions, and N-type regions. The first P-type regions and the second P-type regions lacking an ohmic contact are spaced apart with dimensions of the second P-type regions being minimized and the N-type regions being maximized for given dimensions of the first P-type region. Second ohmic contacts are located between the first P-type region and the Schottky metal layer.
(FR) Dispositif à diode de puissance en carbure de silicium qui comporte un substrat en carbure de silicium sur lequel est disposée une couche épitaxiale en carbure de silicium avec une région active. Une couche métallique de Schottky est sur la région active, et une première couche d'électrode est sur la couche métallique de Schottky. Un premier contact ohmique est sur le substrat de carbure de silicium, et une seconde couche d'électrode est sur le premier contact ohmique. La région active de la couche épitaxiale en carbure de silicium présente une pluralité de premières régions de type P, une pluralité de secondes régions de type P et des régions de type N. Les premières régions de type P et les secondes régions de type P dépourvues d'un contact ohmique sont espacées les unes des autres, les dimensions des secondes régions de type P étant minimisées et les régions de type N étant maximisées pour des dimensions données de la première région de type P. Des seconds contacts ohmiques sont situés entre la première région de type P et la couche métallique de Schottky.
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