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1. WO2022001294 - METHOD FOR PREPARING LASER SE BATTERY

Publication Number WO/2022/001294
Publication Date 06.01.2022
International Application No. PCT/CN2021/087702
International Filing Date 16.04.2021
IPC
H01L 31/0288 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
028including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
0288characterised by the doping material
H01L 31/18 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0224 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
H01L 31/0216 2014.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
Applicants
  • 常州时创能源股份有限公司 CHANGZHOU SHICHUANG ENERGY CO. LTD [CN]/[CN]
Inventors
  • 任常瑞 REN, Changrui
  • 张佳舟 ZHANG, Jiazhou
  • 赵潇祺 ZHAO, Xiaoqi
  • 王敏 WANG, Min
  • 符黎明 FU, Liming
Agents
  • 苏州曼博专利代理事务所(普通合伙) SUZHOU MAMBO PATENT AGENCY (GENERAL PARTNERSHIP)
Priority Data
202010609709.730.06.2020CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) METHOD FOR PREPARING LASER SE BATTERY
(FR) PROCÉDÉ DE PRÉPARATION D'UNE BATTERIE SE LASER
(ZH) 激光 SE 电池的制备方法
Abstract
(EN) Disclosed is a method for preparing a laser SE battery, the method comprising laser doping and the removal of PSG, and further comprising the liquid phase deposition of a phosphorus source and the thermal oxidation thereof, wherein after laser doping, the phosphorus source is first subjected to liquid phase deposition and is then thermally oxidized, which is implemented prior to the removal of PSG. In the present invention, more active P atoms can be reacted in a near-surface region of a lightly doped region to generate PSG, so as to thicken a PSG layer in the lightly doped region, reduce the number of active phosphorus atoms in the lightly doped region and reduce the doping concentration in the near-surface region of the lightly doped region, with the surface concentration of a heavily doped region being basically unchanged, so as to achieve the aim of the directional regulation of the lightly doped region, such that a battery piece has reduced surface compounding, an increased open voltage, and better electrical performance.
(FR) Est divulgué, un procédé de préparation d'une batterie SE laser, le procédé comprenant le dopage au laser et l'élimination du PSG, et comprenant en outre le dépôt en phase liquide d'une source de phosphore et son oxydation thermique, après dopage au laser, la source de phosphore étant d'abord soumise à un dépôt en phase liquide et étant ensuite oxydée thermiquement, ce qui est mis en œuvre avant l'élimination du PSG. Dans la présente invention, des atomes P plus actifs peuvent être mis en réaction dans une région de surface proche d'une région légèrement dopée pour générer du PSG, de manière à épaissir une couche de PSG dans la région légèrement dopée, réduire le nombre d'atomes de phosphore actifs dans la région légèrement dopée et réduire la concentration de dopage dans la région de surface proche de la région légèrement dopée, la concentration de surface d'une région fortement dopée étant fondamentalement inchangée, de manière à atteindre le but de la régulation directionnelle de la région légèrement dopée, de telle sorte qu'un élément de batterie présente une composition de surface réduite, une tension ouverte accrue et de meilleures performances électriques.
(ZH) 本发明公开了一种激光SE电池的制备方法,包括激光掺杂和去PSG,还包括液相沉积磷源和热氧化,在激光掺杂之后,先液相沉积磷源,再热氧化,且热氧化在去PSG之前实施。本发明可以使轻掺区的近表面区有更多的活性P原子反应生成PSG,使轻掺区的PSG层增厚,使轻掺区的活性磷原子数目减少,降低轻掺区近表面区的掺杂浓度,而重掺区表面浓度基本不变,达到定向调控轻掺区的目的,从而使电池片表面复合减少,开压提高,电性能更优。
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