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1. WO2022001037 - METHOD FOR PREPARING MONOCRYSTALLINE SILICON MATERIAL BY MEANS OF HIGH-TEMPERATURE ELECTRODEPOSITION OF MOLTEN SALT

Publication Number WO/2022/001037
Publication Date 06.01.2022
International Application No. PCT/CN2020/139729
International Filing Date 26.12.2020
IPC
C30B 9/14 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
9Single-crystal growth from melt solutions using molten solvents
14by electrolysis
C25D 7/12 2006.1
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
7Electroplating characterised by the article coated
12Semiconductors
C25D 9/08 2006.1
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
9Electrolytic coating other than with metals
04with inorganic materials
08by cathodic processes
C30B 29/06 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
Applicants
  • 上海大学 SHANGHAI UNIVERSITY [CN]/[CN]
Inventors
  • 邹星礼 ZOU, Xingli
  • 庞忠亚 PANG, Zhongya
  • 唐蔚 TANG, Wei
  • 李想 LI, Xiang
  • 张学强 ZHANG, Xueqiang
  • 汪淑娟 WANG, Shujuan
  • 卢明辉 LU, Minghui
  • 许茜 XU, Qian
  • 鲁雄刚 LU, Xionggang
Agents
  • 北京方圆嘉禾知识产权代理有限公司 FANG & ASSOCIATES
Priority Data
202010608312.629.06.2020CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) METHOD FOR PREPARING MONOCRYSTALLINE SILICON MATERIAL BY MEANS OF HIGH-TEMPERATURE ELECTRODEPOSITION OF MOLTEN SALT
(FR) PROCÉDÉ DE PRÉPARATION DE MATÉRIAU DE SILICIUM MONOCRISTALLIN PAR ÉLECTRODÉPOSITION À HAUTE TEMPÉRATURE DE SEL FONDU
(ZH) 一种高温熔盐电沉积制备单晶硅材料的方法
Abstract
(EN) A method for preparing a monocrystalline silicon film and a silicon P-N junction by means of the high-temperature electrodeposition of a molten salt, which method relates to the technical field of semiconductors. A CaCl2-SiO2-CaO system or a CaCl2-CaSiO3 system can be used as a raw material, a dopant is added thereto, and same is subjected to epitaxial growth on a monocrystalline substrate by means of electrodeposition, under the conditions of a constant current, a constant voltage or a pulsed current, of an inert gas atmosphere and 850ºC, so as to obtain a monocrystalline silicon film material.
(FR) L'invention concerne un procédé de préparation d'un film de silicium monocristallin et d'une jonction P-N de silicium par électrodéposition à haute température d'un sel fondu, ledit procédé se rapportant au domaine technique des semi-conducteurs. Un système CaCl2-SiO2-CaO ou un système CaCl2-CaSiO3 peut être utilisé comme matière première, un dopant y étant ajouté, et il est soumis à une croissance épitaxiale sur un substrat monocristallin par électrodéposition, dans les conditions d'un courant constant, d'une tension constante ou d'un courant pulsé, d'une atmosphère de gaz inerte et de 850 °C, de sorte à obtenir un matériau de film de silicium monocristallin.
(ZH) 一种高温熔盐电沉积制备单晶硅膜及硅P-N结的方法,涉及半导体技术领域。可选用CaCl 2-SiO 2-CaO体系或CaCl 2-CaSiO 3体系为原料,并加入掺杂剂,在恒电流、恒电压或脉冲电流条件、以及惰性气体气氛、850℃条件下,通过电沉积在单晶基体上外延生长得到单晶硅膜材料。
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