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1. WO2022001029 - CAPACITIVE PRESSURE SENSOR AND METHOD FOR MANUFACTURING SAME

Publication Number WO/2022/001029
Publication Date 06.01.2022
International Application No. PCT/CN2020/138535
International Filing Date 23.12.2020
IPC
B81C 1/00 2006.1
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
1Manufacture or treatment of devices or systems in or on a substrate
G01L 9/12 2006.1
GPHYSICS
01MEASURING; TESTING
LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
9Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
12by making use of variations in capacitance
Applicants
  • 无锡华润上华科技有限公司 CSMC TECHNOLOGIES FAB2 CO., LTD. [CN]/[CN]
Inventors
  • 苏佳乐 SU, Jiale
  • 周国平 ZHOU, Guoping
  • 张新伟 ZHANG, Xinwei
  • 夏长奉 XIA, Changfeng
Agents
  • 广州华进联合专利商标代理有限公司 ADVANCE CHINA IP LAW OFFICE
Priority Data
202010599056.928.06.2020CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) CAPACITIVE PRESSURE SENSOR AND METHOD FOR MANUFACTURING SAME
(FR) CAPTEUR CAPACITIF DE PRESSION ET PROCÉDÉ POUR LE FABRIQUER
(ZH) 电容压力传感器及其制造方法
Abstract
(EN) A method for manufacturing a capacitive pressure sensor. The method comprises: providing a semiconductor substrate (110), and forming an injection layer (120) on the semiconductor substrate (110); successively forming an oxide layer (130) and a top silicon layer (140) on the injection layer (120); etching the top silicon layer (140) to form a deep groove matrix (150); etching the oxide layer (130) to form a cavity (160); and forming a continuous silicon film (152) on the top silicon layer (140) to seal the cavity (160). In the method for manufacturing a capacitive pressure sensor, an SON process is combined to use a deep groove matrix as a release hole, such that the speed of etching an oxide layer is greatly accelerated, and the process efficiency is improved. Further provided is a capacitive pressure sensor.
(FR) L'invention concerne un procédé de fabrication d'un capteur de pression capacitif. Le procédé consiste à : fournir un substrat semi-conducteur (110) et former une couche d'injection (120) sur le substrat semi-conducteur (110) ; former successivement une couche d'oxyde (130) et une couche de silicium supérieure (140) sur la couche d'injection (120) ; graver la couche de silicium supérieure (140) pour former une matrice de rainure profonde (150) ; graver la couche d'oxyde (130) pour former une cavité (160) ; et former un film de silicium continu (152) sur la couche de silicium supérieure (140) pour sceller la cavité (160). Dans le procédé de fabrication d'un capteur de pression capacitif, un processus SON est combiné pour utiliser une matrice de rainures profondes comme trou de libération, de telle sorte que la vitesse de gravure d'une couche d'oxyde soit fortement accélérée et l'efficacité de traitement soit améliorée. L'invention concerne en outre un capteur de pression capacitif.
(ZH) 一种电容压力传感器的制造方法,包括:提供半导体衬底(110),在半导体衬底(110)上形成有注入层(120);在注入层(120)上依次形成氧化物层(130)和顶硅层(140);刻蚀顶硅层(140)以形成深槽矩阵(150);刻蚀氧化物层(130)以形成空腔(160);使顶硅层(140)形成连续的硅膜(152)以封口空腔(160)。电容压力传感器的制造方法结合了SON工艺,将深槽矩阵作为释放孔,大大加快了刻蚀氧化物层的速度,提高了工艺效率。还提供了一种电容压力传感器。
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