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1. WO2022000480 - DISPLAY MODULE MANUFACTURING METHOD AND DISPLAY SCREEN

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Publication Number WO/2022/000480
Publication Date 06.01.2022
International Application No. PCT/CN2020/100186
International Filing Date 03.07.2020
IPC
H01L 33/50 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
50Wavelength conversion elements
H01L 27/15 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
CPC
H01L 27/15
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
H01L 33/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
50Wavelength conversion elements
Applicants
  • 深圳市思坦科技有限公司 SHENZHEN SITAN TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 刘召军 LIU, Zhaojun
  • 吴国才 WU, Guocai
  • 莫炜静 MO, Weijing
Agents
  • 北京品源专利代理有限公司 BEYOND ATTORNEYS AT LAW
Priority Data
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) DISPLAY MODULE MANUFACTURING METHOD AND DISPLAY SCREEN
(FR) PROCÉDÉ DE FABRICATION DE MODULE D'AFFICHAGE ET ÉCRAN D'AFFICHAGE
(ZH) 显示模组的制作方法及显示屏
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Abstract
(EN) A display module manufacturing method and a display screen. Said method comprises: pre-processing a semiconductor epitaxial wafer to form a semiconductor device; forming a first transparent layer (19) on a surface of a substrate (10) of the semiconductor device; etching the first transparent layer (19) to form a first opening (20) exposing the substrate (10); forming a first quantum dot layer (21) on the surface of the substrate (10) exposed by the first opening (20) and a surface of the first transparent layer (19); etching away the first quantum dot layer (21) outside the first opening (20) to retain the first quantum dot layer (21) inside the first opening (20); and forming a DBR film layer (25) for filtering blue light.
(FR) Procédé de fabrication de module d'affichage et écran d'affichage. Ledit procédé consiste à : prétraiter une tranche épitaxiale semi-conductrice pour former un dispositif à semi-conducteur ; former une première couche transparente (19) sur une surface d'un substrat (10) du dispositif à semi-conducteur ; graver la première couche transparente (19) pour former une première ouverture (20) exposant le substrat (10) ; former une première couche de points quantiques (21) sur la surface du substrat (10) exposée par la première ouverture (20) et une surface de la première couche transparente (19) ; graver la première couche de points quantiques (21) à l'extérieur de la première ouverture (20) pour maintenir la première couche de points quantiques (21) à l'intérieur de la première ouverture (20) ; et former une couche de film DBR (25) pour filtrer la lumière bleue.
(ZH) 一种显示模组的制作方法及显示屏，该方法包括：对半导体外延片进行预处理以形成半导体器件；在所述半导体器件的衬底（10）表面形成第一透明层（19）；刻蚀所述第一透明层（19）以形成暴露所述衬底（10）的第一开口（20）；在所述第一开口（20）暴露的所述衬底（10）表面以及所述第一透明层（19）表面形成第一量子点层（21）；刻蚀掉所述第一开口（20）外部的所述第一量子点层（21），以保留所述第一开口（20）内部的所述第一量子点层（21）；形成滤除蓝光的DBR膜层（25）。
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