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1. WO2022000436 - THREE-DIMENSIONAL INTEGRATED SYSTEM OF RFID CHIP AND SUPER-CAPACITOR AND PREPARATION METHOD THEREFOR

Publication Number WO/2022/000436
Publication Date 06.01.2022
International Application No. PCT/CN2020/099994
International Filing Date 02.07.2020
IPC
G06K 19/077 2006.1
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
KRECOGNITION OF DATA; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
19Record carriers for use with machines and with at least a part designed to carry digital markings
06characterised by the kind of the digital marking, e.g. shape, nature, code
067Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards
07with integrated circuit chips
077Constructional details, e.g. mounting of circuits in the carrier
H01G 11/08 2013.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
11Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer capacitors; Processes for the manufacture thereof or of parts thereof
08Structural combinations, e.g. assembly or connection, of hybrid or EDL capacitors with other electric components, at least one hybrid or EDL capacitor being the main component
H01G 11/84 2013.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
11Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer capacitors; Processes for the manufacture thereof or of parts thereof
84Processes for the manufacture of hybrid or EDL capacitors, or components thereof
Applicants
  • 复旦大学 FUDAN UNIVERSITY [CN]/[CN]
  • 上海集成电路制造创新中心有限公司 SHANGHAI INTEGRATED CIRCUIT MANUFACTURING INNOVATION CENTER CO., LTD [CN]/[CN]
Inventors
  • 朱宝 ZHU, Bao
  • 陈琳 CHEN, Lin
  • 孙清清 SUN, Qingqing
  • 张卫 ZHANG, Wei
Agents
  • 北京得信知识产权代理有限公司 BEIJING TRUSTED INTELLECTUAL PROPERTY AGENCY LTD
Priority Data
202010618775.030.06.2020CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) THREE-DIMENSIONAL INTEGRATED SYSTEM OF RFID CHIP AND SUPER-CAPACITOR AND PREPARATION METHOD THEREFOR
(FR) SYSTÈME INTÉGRÉ TRIDIMENSIONNEL DE PUCE RFID ET DE SUPERCONDENSATEUR ET PROCÉDÉ DE PRÉPARATION ASSOCIÉ
(ZH) 一种RFID芯片与超级电容三维集成系统及其制备方法
Abstract
(EN) Disclosed are a three-dimensional integrated system of an RFID chip and a super-capacitor and a preparation method therefor. The three-dimensional integrated system of an RFID chip and a super-capacitor comprises: a silicon substrate (200); an RFID chip (201), which is located on a front surface of the silicon substrate (200); a super-capacitor, which is located on a back surface of the silicon substrate (200), and the position thereof corresponds to the RFID chip (201) but the two do not make contact; a silicon through-hole structure, which penetrates the silicon substrate (200) and is located on both sides of the RFID chip (201), wherein a chip positive electrode (2021) and a chip negative electrode (2022) of the RFID chip (201) are electrically connected to a capacitor contact positive electrode (2131) and a capacitor contact negative electrode (2132) of the super-capacitor by means of the silicon through-hole structure on both sides; and a package substrate 218, which is electrically connected to the capacitor contact positive electrode (2131) and the capacitor contact negative electrode (2132).
(FR) L'invention concerne un système intégré tridimensionnel d'une puce RFID et d'un supercondensateur et un procédé de préparation associé. Le système intégré tridimensionnel d'une puce RFID et d'un supercondensateur comprend : un substrat de silicium (200); une puce RFID (201), qui est située sur une surface avant du substrat de silicium (200); un supercondensateur, qui est situé sur une surface arrière du substrat de silicium (200), et sa position correspond à la puce RFID (201) mais les deux n'entrent pas en contact; une structure de trou traversant de silicium, qui pénètre dans le substrat de silicium (200) et est située des deux côtés de la puce RFID (201), une électrode positive de puce (2021) et une électrode négative de puce (2022) de la puce RFID (201) sont électriquement connectées à une électrode positive de contact de condensateur (2131) et une électrode négative de contact de condensateur (2132) du supercondensateur au moyen de la structure de trou traversant de silicium sur les deux côtés; et un substrat de boîtier 218, qui est électriquement connecté à l'électrode positive de contact de condensateur (2131) et à l'électrode négative de contact de condensateur (2132).
(ZH) 本发明公开一种RFID芯片与超级电容三维集成系统及其制备方法。该RFID芯片与超级电容三维集成系统包括:硅衬底(200);RFID芯片(201),其位于所述硅衬底(200)正面;超级电容,其位于所述硅衬底(200)背面,位置与所述RFID芯片(201)相对应,但不相互接触;硅通孔结构,其贯穿所述硅衬底(200),位于所述RFID芯片(201)的两侧;其中,所述RFID芯片(201)的芯片正电极(2021)和芯片负电极(2022)分别通过两侧的所述硅通孔结构与所述超级电容的电容接触正电极(2131)和电容接触负电极(2132)电气连通;封装基板218,其与所述电容接触正电极(2131)和所述电容接触负电极(2132)电气连接。
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