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1. WO2022000362 - SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

Publication Number WO/2022/000362
Publication Date 06.01.2022
International Application No. PCT/CN2020/099696
International Filing Date 01.07.2020
IPC
H01L 29/06 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/778 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT
Applicants
  • INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • CHIU, Han-Chin
Agents
  • IDEA INTELLECTUAL (SHENZHEN) IP AGENCY
Priority Data
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
Abstract
(EN) A semiconductor device (100) and a fabrication method thereof. The semiconductor device (100) includes a substrate (10), a first nitride semiconductor layer (18) above the substrate (10), a semiconductor stack disposed on and in contact with the first nitride semiconductor layer (18), and a first electrode in contact with the semiconductor stack. Wherein the semiconductor stack comprises a first layer (20a1) and a second layer (20a2), and a lattice constant of the first layer (20a1) along an a-axis is less than the second layer (20a2).
(FR) L’invention concerne un dispositif à semi-conducteur (100) et son procédé de fabrication. Le dispositif à semi-conducteur (100) comprend un substrat (10), une première couche semi-conductrice de nitrure (18) au-dessus du substrat (10), un empilement de semi-conducteurs disposé sur et en contact avec la première couche semi-conductrice de nitrure (18), et une première électrode en contact avec l'empilement de semi-conducteurs. L'empilement de semi-conducteurs comprend une première couche (20a1) et une seconde couche (20a2), la constante de réseau de la première couche (20a1) le long d'un axe a étant inférieure à celle de la seconde couche (20a2).
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