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1. WO2022000269 - SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

Publication Number WO/2022/000269
Publication Date 06.01.2022
International Application No. PCT/CN2020/099284
International Filing Date 30.06.2020
IPC
H01L 29/778 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT
Applicants
  • INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • LI, Hao
  • ZHANG, Anbang
  • WANG, Jian
  • ZHENG, Haoning
Agents
  • IDEA INTELLECTUAL (SHENZHEN) IP AGENCY
Priority Data
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
Abstract
(EN) A semiconductor device and a fabrication method thereof. The semiconductor device includes a III-nitride layer (110), a gate (120), a connection structure (130), and a gate bus (140). The gate (120) is disposed over the III-nitride layer (110). The connection structure (130) is disposed over the gate (120). The gate bus (140) extends substantially in parallel to the gate (120) and disposed over the connection structure (130) from a top view perspective. The gate bus (140) is electrically connected to the gate (120) through the connection structure (130).
(FR) L'invention concerne un dispositif à semi-conducteur et son procédé de fabrication. Le dispositif à semi-conducteur comprend une couche de nitrure III (110), une grille (120), une structure de connexion (130) et un bus de grille (140). La grille (120) est disposée sur la couche de nitrure III (100). La structure de connexion (130) est disposée sur la grille (120). Le bus de grille (140) s'étend sensiblement parallèlement à la grille (120) et est disposé sur la structure de connexion (130) dans une perspective de vue de dessus. Le bus de grille (140) est électriquement connecté à la grille (120) par l'intermédiaire de la structure de connexion (130).
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