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1. WO2022000123 - ATOMIC-SCALE LEVELING DEVICE WITH MICROSTRUCTURE, AND METHOD FOR PREPARING SAME

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Publication Number WO/2022/000123
Publication Date 06.01.2022
International Application No. PCT/CN2020/098480
International Filing Date 28.06.2020
IPC
H01L 21/48 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/06-H01L21/326201
B82Y 40/00 2011.1
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE  OR TREATMENT OF NANOSTRUCTURES
40Manufacture or treatment of nanostructures
CPC
B82Y 40/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
40Manufacture or treatment of nanostructures
H01L 21/48
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
Applicants
  • 深圳清华大学研究院 RESEARCH INSTITUTE OF TSINGHUA UNIVERSITY IN SHENZHEN [CN]/[CN]
  • 清华大学 TSINGHUA UNIVERSITY [CN]/[CN]
Inventors
  • 郑泉水 ZHENG, Quanshui
  • 向小健 XIANG, Xiaojian
Agents
  • 深圳市惠邦知识产权代理事务所 SHENZHEN HUIBANG INTELLECTUAL PROPERTY AGENCY FIRM
Priority Data
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) ATOMIC-SCALE LEVELING DEVICE WITH MICROSTRUCTURE, AND METHOD FOR PREPARING SAME
(FR) DISPOSITIF DE NIVELLEMENT À L'ÉCHELLE ATOMIQUE DOTÉ D'UNE MICROSTRUCTURE, ET SON PROCÉDÉ DE PRÉPARATION
(ZH) 带有微结构的原子级平整器件及其制备方法
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Abstract
(EN) An atomic-scale leveling device with a microstructure, the device comprising, from bottom to top, a substrate, a bonding material, a second dielectric layer located on the substrate, a microstructure, and a first dielectric layer, wherein the surface of the first dielectric layer is an atomic-scale smooth surface. Further provided is a method for preparing an atomic-scale leveling device with a microstructure. The generation of pits or burrs can thus be effectively avoided when carrying out an existing microstructure processing process.
(FR) L'invention concerne un dispositif de nivellement à l'échelle atomique doté d'une microstructure, le dispositif comprenant, de bas en haut, un substrat, un matériau de liaison, une seconde couche diélectrique située sur le substrat, une microstructure et une première couche diélectrique, la surface de la première couche diélectrique étant une surface lisse à l'échelle atomique. L'invention concerne en outre un procédé de préparation d'un dispositif de nivellement à l'échelle atomique ayant une microstructure. La génération de creux ou de bavures peut ainsi être efficacement évitée lors de la réalisation d'un procédé de traitement de microstructure existant.
(ZH) 一种带有微结构的原子级平整器件，器件由下至上包括基底、粘结材料、位于基底上的第二介质层、微结构、第一介质层，其中第一介质层表面为原子级光滑表面。还提供了带有微结构的原子级平整器件的制备方法，能够有效的避免现有微结构加工过程中产生的凹坑或者毛刺。
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