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1. WO2021249169 - MULTI-ACTIVE-REGION CASCADED SEMICONDUCTOR LASER

Publication Number WO/2021/249169
Publication Date 16.12.2021
International Application No. PCT/CN2021/095515
International Filing Date 24.05.2021
IPC
H01S 5/187 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
18Surface-emitting lasers
187using a distributed Bragg reflector
H01S 5/34 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers , multiple quantum well lasers or graded index separate confinement heterostructure lasers
H01S 5/42 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02-H01S5/30128
42Arrays of surface emitting lasers
CPC
H01S 5/028
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
028Coatings ; ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
H01S 5/18311
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
183having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
18308having a special structure for lateral current or light confinement
18311using selective oxidation
H01S 5/18358
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
183having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
18358containing spacer layers to adjust the phase of the light wave in the cavity
H01S 5/18383
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
183having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
18383with periodic active regions at nodes or maxima of light intensity
H01S 5/18386
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
183having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
18386Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
H01S 5/18397
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
183having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
18397Plurality of active layers vertically stacked in a cavity for multi-wavelength emission
Applicants
  • 苏州长光华芯光电技术股份有限公司 SUZHOU EVERBRIGHT PHOTONICS CO., LTD. [CN]/[CN]
  • 苏州长光华芯半导体激光创新研究院有限公司 EVERBRIGHT INSTITUTE OF SEMICONDUCTOR PHOTONICS CO., LTD. [CN]/[CN]
Inventors
  • 王俊 WANG, Jun
  • 肖垚 XIAO, Yao
  • 谭少阳 TAN, Shaoyang
  • 刘恒 LIU, Heng
  • 李泉灵 LI, Quanling
Agents
  • 北京三聚阳光知识产权代理有限公司 SUNSHINE INTELLECTUAL PROPERTY INTERNATIONAL CO., LTD.
Priority Data
202010526713.709.06.2020CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) MULTI-ACTIVE-REGION CASCADED SEMICONDUCTOR LASER
(FR) LASER À SEMI-CONDUCTEUR À MULTI-RÉGIONS ACTIVES EN CASCADE
(ZH) 一种多有源区级联的半导体激光器
Abstract
(EN) The present application relates to the technical field of semiconductor photoelectrons, and in particular to a multi-active-region cascaded semiconductor laser. The multi-active-region cascaded semiconductor laser comprises: several cascaded active regions, each cascaded active region comprising a plurality of active regions; and a tunnel junction provided on at least one side of the cascaded active region and electrically connected to the cascaded active region, wherein in the cascaded active region, at least one group of adjacent active regions are connected by means of a barrier layer. In this way, more active regions can be added in a periodic gain structure, the internal quantum efficiency of the device is improved, and the density of carriers is also reduced, thus more gains are obtained. The barrier layer connection does not have the characteristic of introducing a new pn junction, thus the layer does not increase a working turn-on voltage of the device, and the epitaxial growth is simpler than that of the tunnel junction.
(FR) La présente demande se rapporte au domaine technique des photoélectrons à semi-conducteur, et concerne en particulier un laser à semi-conducteur à multi-régions actives en cascade. Le laser à semi-conducteur à multi-régions actives en cascade comprend : plusieurs régions actives en cascade, chaque région active en cascade comprenant une pluralité de régions actives ; et une jonction tunnel disposée sur au moins un côté de la région active en cascade et connectée électriquement à celle-ci. Dans la région active en cascade, au moins un groupe de régions actives adjacentes est relié au moyen d'une couche barrière. De cette manière, des régions plus actives peuvent être ajoutées dans une structure à gain périodique, le rendement quantique interne du dispositif est améliorée, et la densité de porteurs est également réduite, ce qui permet d'obtenir davantage de gains. La connexion de couche barrière n'a pas la caractéristique d'introduire une nouvelle jonction pn, ainsi, la couche n'augmente pas une tension de mise en marche du dispositif, et la croissance épitaxiale est plus simple que celle de la jonction tunnel.
(ZH) 本申请涉及半导体光电子技术领域,具体涉及一种多有源区级联的半导体激光器。所述多有源区级联的半导体激光器包括:若干级联有源区,每一所述级联有源区包括多个有源区;隧道结,在所述级联有源区的至少一侧设置,与所述级联有源区电连接;其中,在所述级联有源区中,至少一组相邻的所述有源区之间通过势垒层连接。这样周期性增益结构中可增加更多的有源区,提高了器件的内量子效率,同时也降低了载流子的密度,从而获得更多的增益。势垒层连接不具有引入新的pn结的特性,因此该层不会提高器件工作的开启的电压,同时外延生长也较隧道结简单。
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