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1. WO2021241909 - MICRO-LED TRANSFER DEVICE AND MICRO-LED TRANSFER METHOD USING SAME

Publication Number WO/2021/241909
Publication Date 02.12.2021
International Application No. PCT/KR2021/005792
International Filing Date 10.05.2021
IPC
H01L 21/67 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/52 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
52Mounting semiconductor bodies in containers
CPC
H01L 21/52
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
52Mounting semiconductor bodies in containers
H01L 21/67
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
Applicants
  • 삼성전자주식회사 SAMSUNG ELECTRONICS CO., LTD. [KR]/[KR]
Inventors
  • 곽도영 KWAG, Doyoung
  • 김병철 KIM, Byungchul
  • 박상무 PARK, Sangmoo
  • 최원식 CHOI, Wonsik
Agents
  • 김태헌 KIM, Tae-hun
  • 정홍식 JEONG, Hong-sik
Priority Data
10-2020-006434328.05.2020KR
Publication Language Korean (ko)
Filing Language Korean (KO)
Designated States
Title
(EN) MICRO-LED TRANSFER DEVICE AND MICRO-LED TRANSFER METHOD USING SAME
(FR) DISPOSITIF DE TRANSFERT DE MICRO-DEL ET PROCÉDÉ DE TRANSFERT DE MICRO-DEL FAISANT APPEL AUDIT DISPOSITIF
(KO) 마이크로 LED 전사 장치 및 이를 이용한 마이크로 LED 전사 방법
Abstract
(EN) An LED transfer device is disclosed. The LED transfer device comprises: a laser device for emitting a laser beam; a first stage on which a first substrate having a plurality of LEDs arranged thereon is separably mounted and which is disposed below the laser device; a second stage on which a second substrate having a TFT layer formed thereon is separably mounted and which is disposed below the first stage; a first and a second driving device for moving the first and the second stage, respectively; an emitting device disposed above the first stage and emitting a laser beam toward the first substrate so that the LEDs of the first substrate are transferred to the second substrate; a position detection device for detecting positions of the first stage and the second stage during an LED transfer process; and a processor for determining the position data of the first stage and the second stage, which are delivered from the position detection device, and controlling the first and the second driving device so as to correct the positions of the first and the second stage.
(FR) Est divulgué un dispositif de transfert de DEL. Le dispositif de transfert de DEL comprend : un dispositif laser servant à émettre un faisceau laser ; un premier étage sur lequel un premier substrat recouvert d'une pluralité de DEL est monté amovible et qui est disposé au-dessous du dispositif laser ; un second étage sur lequel un second substrat recouvert d'une couche de TFT est monté amovible et qui est disposé au-dessous du premier étage ; un premier et un second dispositif d'entraînement servant à déplacer respectivement le premier et le second étage ; un dispositif d'émission disposé au-dessus du premier étage et émettant un faisceau laser vers le premier substrat de telle sorte que les DEL du premier substrat sont transférées au second substrat ; un dispositif de détection de position servant à détecter des positions du premier et du second étage pendant un processus de transfert de DEL ; et un processeur servant à déterminer les données de position du premier et du second étage, qui sont délivrées par le dispositif de détection de position, et à commander le premier et le second dispositif d'entraînement de façon à corriger les positions du premier et du second étage.
(KO) LED 전사 장치가 개시된다. LED 전사 장치는 레이저 빔을 조사하는 레이저 장치와, 다수의 LED가 배열된 제1 기판이 분리 가능하게 장착되고 레이저 장치의 하측에 배치되는 제1 스테이지와, TFT 층이 형성된 제2 기판이 분리 가능하게 장착되고 제1 스테이지의 하측에 배치되는 제2 스테이지와, 제1 및 제2 스테이지를 각각 이동 시키는 제1 및 제2 구동 장치와, 제1 스테이지 상측에 배치되어 제1 기판을 향해 레이저 빔을 조사하여 제1 기판의 LED를 제2 기판에 전사하는 조사 장치와, LED 전사 공정 중에 제1 스테이지 및 제2 스테이지의 위치를 검출하는 위치 검출 장치와, 위치 검출 장치로부터 전달된 제1 스테이지 및 제2 스테이지의 위치 데이터를 판단하여 제1 및 제2 스테이지의 위치를 보정하도록 제1 및 제2 구동 장치를 제어하는 프로세서를 포함한다.
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