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1. WO2021210001 - METHOD FOR INDUCING CONDUCTIVITY AT AND NEAR OXIDE INTERFACES

Publication Number WO/2021/210001
Publication Date 21.10.2021
International Application No. PCT/IL2021/050431
International Filing Date 15.04.2021
IPC
H01L 21/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
CPC
H01L 21/3105
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
H01L 21/44
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
34the devices having semiconductor bodies not provided for in groups ; H01L21/0405, H01L21/0445; , H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
44Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
H01L 31/022466
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022466made of transparent conductive layers, e.g. TCO, ITO layers
Applicants
  • TECHNION RESEARCH & DEVELOPMENT FOUNDATION LIMITED [IL]/[IL]
Inventors
  • KORNBLUM, Lior
  • COHEN AZARZAR, Dana
  • BASKIN, Maria
  • LI, Yang
Agents
  • EHRLICH, Gal
  • WATERMAN, Hadassa
  • MELNICK, Geoffrey, L.
Priority Data
63/010,75116.04.2020US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR INDUCING CONDUCTIVITY AT AND NEAR OXIDE INTERFACES
(FR) PROCÉDÉ DESTINÉ À INDUIRE LA CONDUCTIVITÉ AU NIVEAU ET À PROXIMITÉ D'INTERFACES D'OXYDES
Abstract
(EN) A process of preparing a conductive oxide interface is described herein, comprising contacting a surface of a first oxide with a plasma of a reducing gas to obtain a treated surface, and depositing a second oxide on the treated surface, thereby obtaining a conductive oxide interface between the first oxide and the second oxide. Further described herein are composites and articles of manufacture comprising same, the composites comprising a first oxide and second oxide, and an interface between the first oxide and second oxide which comprises a conductive oxide interface, wherein the conductive oxide interface comprises nitrogen atoms and/or the second oxide is in an amorphous form and the conductive oxide interface is characterized by a sheet resistance of no more than 105 omega/square.
(FR) La présente invention concerne un processus consistant à préparer une interface d'oxydes conductrice, consistant à mettre en contact une surface d'un premier oxyde avec un plasma d'un gaz réducteur pour obtenir une surface traitée, et à déposer un deuxième oxyde sur la surface traitée, obtenant ainsi une interface d'oxydes conductrice entre le premier oxyde et le deuxième oxyde. La présente invention concerne en outre des composites et des articles manufacturés les comprenant, les composites comprenant : un premier oxyde et un deuxième oxyde, et une interface entre le premier oxyde et le deuxième oxyde qui comprend une interface d'oxydes conductrice. L'interface d'oxydes conductrice comprend des atomes d'azote et/ou le deuxième oxyde est dans une forme amorphe et l'interface d'oxydes conductrice est caractérisée par une résistance de feuille qui n'est pas supérieure à 105 Ω/carré.
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