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1. WO2021145127 - SOLID-STATE IMAGING DEVICE

Publication Number WO/2021/145127
Publication Date 22.07.2021
International Application No. PCT/JP2020/047032
International Filing Date 16.12.2020
IPC
H01L 27/146 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/3745 2011.1
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
374Addressed sensors, e.g. MOS or CMOS sensors
3745having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 9/07 2006.1
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
9Details of colour television systems
04Picture signal generators
07with one pick-up device only
CPC
H01L 27/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/3745
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
374Addressed sensors, e.g. MOS or CMOS sensors
3745having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 9/07
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
9Details of colour television systems
04Picture signal generators
07with one pick-up device only
Applicants
  • ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP]/[JP]
Inventors
  • 片山 泰志 KATAYAMA Hiroshi
Agents
  • 田中 秀▲てつ▼ TANAKA Hidetetsu
  • 小林 龍 KOBAYASHI Toru
  • 森 哲也 MORI Tetsuya
Priority Data
2020-00498916.01.2020JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SOLID-STATE IMAGING DEVICE
(FR) DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEUR
(JA) 固体撮像装置
Abstract
(EN)
The purpose of the present disclosure is to provide a solid-state imaging device capable of inhibiting degradation of image quality. The solid-state imaging device comprises: a first pixel having a plurality of photoelectric conversion units, which share a first color filter, and a plurality of on-chip lenses; a second pixel disposed adjacent to the first pixel and having a plurality of photoelectric conversion units, which share a second color filter, and a plurality of on-chip lenses; and a first light-blocking region provided between the first pixel and the second pixel.
(FR)
Le but de la présente invention est de fournir un dispositif d'imagerie à semi-conducteur capable d'inhiber la dégradation de la qualité d'image Le dispositif d'imagerie à semi-conducteur comprend : un premier pixel ayant une pluralité d'unités de conversion photoélectrique, qui partagent un premier filtre de couleur, et une pluralité de lentilles sur puce ; un second pixel disposé adjacent au premier pixel et ayant une pluralité d'unités de conversion photoélectrique, qui partagent un second filtre de couleur, et une pluralité de lentilles sur puce ; et une première région de blocage de lumière disposée entre le premier pixel et le second pixel.
(JA)
本開示は、画質劣化を抑制できる固体撮像装置を提供することを目的とする。固体撮像装置は、第1のカラーフィルタを共有する複数の光電変換部と、複数のオンチップレンズとを有する第1の画素と、前記第1の画素と隣り合って配置され、第2のカラーフィルタを共有する複数の光電変換部と、複数のオンチップレンズとを有する第2の画素と、前記第1の画素と前記第2の画素との間に設けられた第1の遮光領域とを有している。
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