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1. WO2021109207 - PREPARATION METHOD FOR GRAPHENE OXIDE THIN FILM, OLED DEVICE AND PREPARATIUON METHOD

Publication Number WO/2021/109207
Publication Date 10.06.2021
International Application No. PCT/CN2019/125080
International Filing Date 13.12.2019
IPC
H01L 51/56 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H01L 51/50 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
CPC
B05D 1/005
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
1Processes for applying liquids or other fluent materials
002the substrate being rotated
005Spin coating
B05D 2203/35
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
2203Other substrates
30Other inorganic substrates, e.g. ceramics, silicon
35Glass
B05D 3/007
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
3Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
007After-treatment
B05D 5/12
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
5Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
12to obtain a coating with specific electrical properties
B05D 7/57
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
7Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
50Multilayers
56Three layers or more
57the last layer being a clear coat
C23C 14/086
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
08Oxides
086of zinc, germanium, cadmium, indium, tin, thallium or bismuth
Applicants
  • 武汉华星光电半导体显示技术有限公司 WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 汪亚民 WANG, Yamin
Agents
  • 深圳紫藤知识产权代理有限公司 PURPLEVINE INTELLECTUAL PROPERTY (SHENZHEN) CO., LTD
Priority Data
201911210605.202.12.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) PREPARATION METHOD FOR GRAPHENE OXIDE THIN FILM, OLED DEVICE AND PREPARATIUON METHOD
(FR) PROCÉDÉ DE PRÉPARATION DE FILM MINCE D'OXYDE DE GRAPHÈNE, DISPOSITIF À OLED ET PROCÉDÉ DE PRÉPARATION
(ZH) 氧化石墨烯薄膜的制备方法、 OLED 器件及制备方法
Abstract
(EN)
A preparation method for a graphene oxide thin film, an OLED device and a preparation method. The OLED device (10) comprises a substrate (11), an anode (12), a hole injection layer (13), a hole transport layer (14), a light-emitting layer (15), an electron transport layer (16), an electron injection layer (17) and a cathode (18) that are stacked. The hole injection layer (13) is a graphene oxide layer that has a concentration range of 0.3-1 mg/ml. The hole transport layer (14) is any one among N, N'-diphenyl-N, N'-bis (3-methylphenyl)-1, 1'-biphenyl-4, 4'-diamine, 1,4-bis (diphenylamine) biphenyl, and N, N'-diphenyl-N, N'-bis (1-naphthyl)-1 and 1'-biphenyl-4, 4'-diamine.
(FR)
L'invention concerne un procédé de préparation d'un film mince d'oxyde de graphène, un dispositif à OLED et un procédé de préparation. Le dispositif à OLED (10) comprend un substrat (11), une anode (12), une couche d'injection à trous (13), une couche de transport à trous (14), une couche électroluminescente (15), une couche de transport d'électrons (16), une couche d'injection d'électrons (17) et une cathode (18) qui sont empilés. La couche d'injection à trous (13) est une couche d'oxyde de graphène qui a une plage de concentration de 0,3-1 mg/ml. La couche de transport à trous (14) est un quelconque élément parmi N, N'-diphényl-N, N'-bis (3-méthylphényl)) -1, 1 '-biphényl -4, 4 '-diamine, 1,4-bis (diphénylamine) biphényle, et N, N'-diphényl-N, N'-bis (1-naphtyl) -1 et 1 '-biphényl -4, 4 '-diamine.
(ZH)
一种氧化石墨烯薄膜的制备方法、一种OLED器件及制备方法,其中,所述OLED器件(10)包括层叠设置的基底(11)、阳极(12)、空穴注入层(13)、空穴传输层(14)、发光层(15)、电子传输层(16)、电子注入层(17)以及阴极(18),所述空穴注入层(13)为浓度范围为0.3~1mg/ml的氧化石墨烯层,所述空穴传输层(14)为N,N'-二苯基-N,N'-二(3-甲苯基)-1,1'-联苯-4,4'-二胺、1,4-二(二苯胺基)联苯以及N,N'-二苯基-N,N'-二(1-萘基)-1,1'-联苯-4,4'-二胺中的任意一种。
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