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1. WO2021091518 - A DYNAMIC RANDOM ACCESS MEMORY (DRAM) STRUCTURE WITH BODY BIAS VOLTAGE THAT CAN BE ADAPTED TO THE ACCESS PATTERN OF CELLS

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Publication Number WO/2021/091518
Publication Date 14.05.2021
International Application No. PCT/TR2020/051058
International Filing Date 06.11.2020
IPC
G11C 7/00 2006.1
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
7Arrangements for writing information into, or reading information out from, a digital store
G11C 11/406 2006.1
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
406Management or control of the refreshing or charge-regeneration cycles
CPC
G11C 11/404
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
403with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
404with one charge-transfer gate, e.g. MOS transistor, per cell
G11C 11/4074
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
407for memory cells of the field-effect type
4074Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
Applicants
  • TOBB EKONOMI VE TEKNOLOJI UNIVERSITESI [TR]/[TR]
Inventors
  • KOC, Fahrettin
  • ERGIN, Oguz
Agents
  • PROIP PATENT TRADEMARK CONSULTANCY
Priority Data
2019/1724307.11.2019TR
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) A DYNAMIC RANDOM ACCESS MEMORY (DRAM) STRUCTURE WITH BODY BIAS VOLTAGE THAT CAN BE ADAPTED TO THE ACCESS PATTERN OF CELLS
(FR) STRUCTURE DE MÉMOIRE VIVE DYNAMIQUE (DRAM) À TENSION DE POLARISATION DE CORPS QUI PEUT ÊTRE ADAPTÉE AU MOTIF D'ACCÈS DE CELLULES
front page image
Abstract
(EN) The present invention relates to the adaptive application of bias voltages (B) to the access transistors in the cells (21) in dynamic random access memory (DRAM) structures, according to the access pattern of the rows, in other words, whether the rows are accessed and/or how often rows are accessed.
(FR) La présente invention concerne l'application adaptative de tensions de polarisation (B) aux transistors d'accès dans les cellules (21) dans des structures de mémoire vive dynamique (DRAM), selon le motif d'accès des rangées, en d'autres termes, si on accède aux rangées et/ou à quelle fréquence on accède aux rangées.
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