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1. WO2021066063 - IMAGING ELEMENT AND IMAGING DEVICE

Publication Number WO/2021/066063
Publication Date 08.04.2021
International Application No. PCT/JP2020/037287
International Filing Date 30.09.2020
IPC
H04N 5/369 2011.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
H01L 23/522 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
CPC
H01L 21/768
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
H01L 23/522
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 27/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/369
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
Applicants
  • 株式会社ニコン NIKON CORPORATION [JP]/[JP]
Inventors
  • 小倉 大輝 OGURA, Daiki
Agents
  • 永井 冬紀 NAGAI, Fuyuki
  • 白石 直正 SHIRAISHI, Naomasa
Priority Data
2019-18078330.09.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) IMAGING ELEMENT AND IMAGING DEVICE
(FR) ÉLÉMENT D'IMAGERIE ET DISPOSITIF D'IMAGERIE
(JA) 撮像素子および撮像装置
Abstract
(EN)
This imaging element is provided with: a first substrate on which a photoelectric conversion unit for photoelectrically converting light to generate a charge and a reading circuit for outputting a signal based on the charge generated in the photoelectric conversion unit are provided; a second substrate which is laminated on the first substrate and on which a processing unit for processing the signal outputted from the reading circuit is provided; and a connection unit which electrically connects the reading circuit and the processing unit and on which a curved part is provided that curves outside of the vicinity of the first substrate and the second substrate.
(FR)
Élément d'imagerie comprenant : un premier substrat sur lequel sont placés une unité de conversion photoélectrique destinée à convertir de manière photoélectrique de la lumière pour générer une charge et un circuit de lecture destiné à délivrer en sortie un signal sur la base de la charge générée dans l'unité de conversion photoélectrique ; un second substrat qui est stratifié sur le premier substrat et sur lequel une unité de traitement destinée à traiter le signal émis par le circuit de lecture est placée ; et une unité de connexion qui connecte électriquement le circuit de lecture et l'unité de traitement et sur laquelle est située une partie incurvée qui s'incurve hors du voisinage du premier substrat et du second substrat.
(JA)
撮像素子は、光を光電変換して電荷を生成する光電変換部と光電変換部で生成された電荷に基づく信号を出力する読出回路とが設けられる第1基板と、第1基板に積層され、読出回路から出力された信号を処理する処理部が設けられる第2基板と、第1基板および第2基板の近傍以外で屈曲する屈曲部が設けられ、読出回路と処理部とを電気的に接続する接続部と、を備える。
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