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1. WO2021061277 - LITHOGRAPHY SIMULATION AND OPTICAL PROXIMITY CORRECTION

Publication Number WO/2021/061277
Publication Date 01.04.2021
International Application No. PCT/US2020/044663
International Filing Date 31.07.2020
IPC
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
CPC
G03F 1/36
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
36Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
G03F 7/38
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
38Treatment before imagewise removal, e.g. prebaking
Applicants
  • APPLIED MATERIALS, INC. [US]/[US]
Inventors
  • DAI, Huixiong
  • BANGAR, Mangesh Ashok
  • SHAH, Pinkesh Rohit
  • NEMANI, Srinivas D.
  • WELCH, Steven Hiloong
  • NGAI, Christopher Siu Wing
  • YIEH, Ellie Y.
Agents
  • PATTERSON, B. Todd
  • TABOADA, Keith
Priority Data
62/904,08223.09.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) LITHOGRAPHY SIMULATION AND OPTICAL PROXIMITY CORRECTION
(FR) SIMULATION DE LITHOGRAPHIE ET CORRECTION DE PROXIMITÉ OPTIQUE
Abstract
(EN)
Embodiments of the disclosure relate to lithography simulation and optical proximity correction. Field-guided post exposure bake processes have enabled improved lithography performance and various parameters of such processes are included in the optical proximity correction models generated in accordance with the embodiments described herein. An optical proximity correction model includes one or more parameters of anisotropic acid etching characteristics, ion generation and/or movement, electron movement, hole movement, and chemical reaction characteristics.
(FR)
Des modes de réalisation de l'invention concernent la simulation de lithographie et la correction de proximité optique. Des procédés de cuisson post-exposition guidés par un champ ont permis d'améliorer les performances de lithographie et divers paramètres de tels procédés sont inclus dans les modèles de correction de proximité optique générés conformément aux modes de réalisation décrits dans la description. Un modèle de correction de proximité optique comprend un ou plusieurs paramètres de caractéristiques de gravure d'acide anisotrope, de génération d'ions et/ou de mouvement, de mouvement d'électrons, de mouvement de trou et de caractéristiques de réaction chimique.
Also published as
Latest bibliographic data on file with the International Bureau