Processing

Please wait...

Settings

Settings

Goto Application

1. WO2021060843 - SUBSTRATE FIXATION DEVICE FOR SCINTILLATOR DEPOSITION, SUBSTRATE DEPOSITION DEVICE COMPRISING SAME, AND DEPOSITION METHOD OF SCINTILLATOR BY USING SAME

Publication Number WO/2021/060843
Publication Date 01.04.2021
International Application No. PCT/KR2020/012896
International Filing Date 23.09.2020
IPC
C30B 25/10 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
10Heating of the reaction chamber or the substrate
C30B 25/12 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
12Substrate holders or susceptors
C30B 25/16 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
16Controlling or regulating
G01T 1/20 2006.01
GPHYSICS
01MEASURING; TESTING
TMEASUREMENT OF NUCLEAR OR X-RADIATION
1Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
16Measuring radiation intensity
20with scintillation detectors
CPC
C30B 25/10
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
10Heating of the reaction chamber or the substrate
C30B 25/12
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
12Substrate holders or susceptors
C30B 25/16
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
16Controlling or regulating
G01T 1/20
GPHYSICS
01MEASURING; TESTING
TMEASUREMENT OF NUCLEAR OR X-RADIATION
1Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
16Measuring radiation intensity
20with scintillation detectors
Applicants
  • 주식회사 뷰웍스 VIEWORKS CO., LTD. [KR]/[KR]
Inventors
  • 류인혁 RYU, In Hyuck
Agents
  • 특허법인 우인 WOOIN PATENT & LAW FIRM
Priority Data
10-2019-011951827.09.2019KR
10-2020-012054618.09.2020KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) SUBSTRATE FIXATION DEVICE FOR SCINTILLATOR DEPOSITION, SUBSTRATE DEPOSITION DEVICE COMPRISING SAME, AND DEPOSITION METHOD OF SCINTILLATOR BY USING SAME
(FR) DISPOSITIF DE FIXATION DE SUBSTRAT POUR DÉPÔT DE SCINTILLATEUR, DISPOSITIF DE DÉPÔT DE SUBSTRAT LE COMPRENANT, ET PROCÉDÉ DE DÉPÔT DE SCINTILLATEUR À L'AIDE DE CELUI-CI
(KO) 신틸레이터 증착을 위한 기판 고정 장치, 이를 포함하는 기판 증착 장치 및 이를 이용한 신틸레이터의 증착 방법
Abstract
(EN)
A substrate fixation device of the present invention is a substrate fixation device for fixing a substrate so that a deposition material evaporated from at least one evaporation source is deposited on the substrate. The substrate fixation device comprises: a substrate temperature adjustment part for transferring heat to the substrate; and a substrate fixation part coupled to one side surface of the substrate temperature adjustment part and fixing the substrate, wherein the substrate fixation part fixes the substrate so that the front surface of the substrate is exposed in a direction toward the evaporation source, and a space is formed between the substrate fixation part and the rear surface of the substrate.
(FR)
La présente invention concerne un dispositif de fixation de substrat qui est un dispositif de fixation de substrat pour fixer un substrat de telle sorte qu'un matériau de dépôt évaporé d'au moins une source d'évaporation est déposé sur le substrat. Le dispositif de fixation de substrat comprend : une partie de réglage de température de substrat pour transférer de la chaleur au substrat ; et une partie de fixation de substrat couplée à une surface latérale de la partie de réglage de température de substrat et fixant le substrat, la partie de fixation de substrat fixant le substrat de telle sorte que la surface avant du substrat est exposée dans une direction vers la source d'évaporation, et un espace est formé entre la partie de fixation de substrat et la surface arrière du substrat.
(KO)
본 발명의 기판 고정 장치는, 적어도 하나의 증발원으로부터 증발된 증착 재료가 기판에 증착되도록 상기 기판을 고정하는 기판 고정 장치이다. 상기 기판 고정 장치는, 상기 기판에 열을 전달하는 기판 온도 조절부와, 상기 기판 온도 조절부의 일측면에 결합되고 상기 기판을 고정하는 기판 고정부를 포함하고, 상기 기판 고정부는 상기 기판의 전면이 상기 증발원 방향으로 노출되도록 상기 기판을 고정하며, 상기 기판 고정부와 상기 기판의 후면 사이에는 스페이스가 형성되는 것을 특징으로 한다.
Latest bibliographic data on file with the International Bureau