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1. WO2021060365 - METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATES AND DEVICE FOR PRODUCING SEMICONDUCTOR SUBSTRATES

Publication Number WO/2021/060365
Publication Date 01.04.2021
International Application No. PCT/JP2020/036000
International Filing Date 24.09.2020
IPC
C30B 29/36 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
36Carbides
C30B 23/06 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
23Single-crystal growth by condensing evaporated or sublimed materials
02Epitaxial-layer growth
06Heating of the deposition chamber, the substrate, or the materials to be evaporated
CPC
C30B 23/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
23Single-crystal growth by condensing evaporated or sublimed materials
02Epitaxial-layer growth
06Heating of the deposition chamber, the substrate or the materials to be evaporated
C30B 29/36
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
36Carbides
Applicants
  • 学校法人関西学院 KWANSEI GAKUIN EDUCATIONAL FOUNDATION [JP]/[JP]
  • 豊田通商株式会社 TOYOTA TSUSHO CORPORATION [JP]/[JP]
Inventors
  • 金子 忠昭 KANEKO, Tadaaki
  • 小島 清 KOJIMA, Kiyoshi
Agents
  • 辻田 朋子 TSUJITA, Tomoko
Priority Data
2019-17804527.09.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATES AND DEVICE FOR PRODUCING SEMICONDUCTOR SUBSTRATES
(FR) PROCÉDÉ DE PRODUCTION DE SUBSTRATS SEMI-CONDUCTEURS ET DISPOSITIF DE PRODUCTION DE SUBSTRATS SEMI-CONDUCTEURS
(JA) 半導体基板の製造方法及び半導体基板の製造装置
Abstract
(EN)
The present invention attempts to solve the problem of providing novel technology that makes it possible to grow high-quality semiconductor substrates. In order to solve the abovementioned problem, the present invention provides: a method for producing semiconductor substrates that includes an installation step in which starting substrates and starting materials are installed in an alternating manner and a heating step in which the starting substrates and the starting materials are heated and a growth layer is formed on the starting substrates; and a device for producing the semiconductor substrates. Owing to this configuration, the present invention makes it possible to simultaneously achieve desired growth conditions in each of a plurality of starting substrates and thereby provide novel technology that makes it possible to grow high-quality semiconductor substrates.
(FR)
La présente invention tente de résoudre le problème de la fourniture d'une nouvelle technologie qui permet de faire croître des substrats semi-conducteurs de haute qualité. Afin de résoudre le problème mentionné ci-dessus, la présente invention concerne : un procédé de production de substrats semi-conducteurs qui comprend une étape d'installation dans laquelle des substrats de départ et des matériaux de départ sont installés de manière alternée et une étape de chauffage dans laquelle les substrats de départ et les matériaux de départ sont chauffés et une couche de croissance est formée sur les substrats de départ ; et un dispositif de production des substrats semi-conducteurs. Grâce à cette configuration, la présente invention permet d'obtenir simultanément des conditions de croissance souhaitées dans chacun d'une pluralité de substrats de départ et de fournir ainsi une nouvelle technologie qui permet de faire croître des substrats semi-conducteurs de haute qualité.
(JA)
高品質な半導体基板を成長可能な新規の技術を提供することを解決すべき課題とする。 上記課題を解決するため、本発明は、原基板及び原料体を交互に設置する設置工程と、前記原基板及び原料体を加熱し前記原基板上に成長層を形成する加熱工程と、を含む半導体基板の製造方法及びその製造装置を実現する。このような構成とすることで、本発明は、複数の原基板のそれぞれにおいて、所望の成長条件を同時に実現することができるため、高品質な半導体基板を成長可能な新規の技術を提供することができる。
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