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1. WO2021056096 - LOW POWER DUAL-SENSITIVITY FG-MOSFET SENSOR FOR A WIRELESS RADIATION DOSIMETER

Publication Number WO/2021/056096
Publication Date 01.04.2021
International Application No. PCT/CA2020/051242
International Filing Date 16.09.2020
IPC
G01T 1/02 2006.01
GPHYSICS
01MEASURING; TESTING
TMEASUREMENT OF NUCLEAR OR X-RADIATION
1Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
02Dosimeters
G01S 13/82 2006.01
GPHYSICS
01MEASURING; TESTING
SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
13Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
74Systems using reradiation of radio waves, e.g. secondary radar systems; Analogous systems
82wherein continuous-type signals are transmitted
H01L 29/788 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
788with floating gate
CPC
G01T 1/026
GPHYSICS
01MEASURING; TESTING
TMEASUREMENT OF NUCLEAR OR X-RADIATION
1Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
02Dosimeters
026Semiconductor dose-rate meters
H01L 27/1443
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
1443with at least one potential jump or surface barrier
H01L 27/14659
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14643Photodiode arrays; MOS imagers
14658X-ray, gamma-ray or corpuscular radiation imagers
14659Direct radiation imagers structures
H01L 29/42324
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
42312Gate electrodes for field effect devices
42316for field-effect transistors
4232with insulated gate
42324Gate electrodes for transistors with a floating gate
H01L 29/788
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
788with floating gate
H01L 31/119
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
115Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
119characterised by field-effect operation, e.g. MIS type detectors
Applicants
  • BEST MEDICAL CANADA LTD. [CA]/[CA]
Inventors
  • YADEGARI, Behzad
  • MCGARRY, Steven
  • ROY, Langis
Agents
  • SPRIGINGS, Mark
  • O'NEILL, Kevin
  • BANASCHEWSKI, Kevin
  • HARRIS, John
  • ROY, Matthew
Priority Data
17/008,14331.08.2020US
62/906,52626.09.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) LOW POWER DUAL-SENSITIVITY FG-MOSFET SENSOR FOR A WIRELESS RADIATION DOSIMETER
(FR) CAPTEUR À TRANSISTOR À EFFET DE CHAMP MÉTAL-OXYDE SEMI-CONDUCTEUR À GRILLE FLOTTANTE (FG-MOSFET) À SENSIBILITÉ DOUBLE BASSE PUISSANCE POUR DOSIMÈTRE DE RAYONNEMENT SANS FIL
Abstract
(EN)
Low-power, dual sensitivity thin oxide FG-MOSFET sensors in RF-CMOS technology for a wireless X-ray dosimeter chip, methods for radiation measurement and for charging and discharging the sensors are described. The FG-MOSFET sensor from a 0.13 µm (RF-CMOS process, includes a thin oxide layer having a device region, a source and a drain associated with the device well region, separated by a channel region, a floating gate extending over the channel region, and a floating gate extension extending over the thin oxide layer adjacent to the device well region. In a matched sensor pair for dual sensitivity radiation measurement, the floating gate and the floating gate extension of a FG-MOSFET higher sensitivity sensor are without a salicide layer or a silicide layer formed thereon and the floating gate and the floating gate extension of a FG-MOSFET lower sensitivity sensor have a salicide layer or a silicide layer formed thereon.
(FR)
L'invention concerne des capteurs à transistor à effet de champ métal-oxyde semi-conducteur à gille flottante (FG-MOSFET) à oxyde mince à sensibilité double basse puissance dans une technologie de semi-conducteur complémentaire à l'oxyde de métal radiofréquence (RF-CMOS) pour une puce de dosimètre de rayons X sans fil, des procédés de mesure de rayonnement et de charge et décharge des capteurs. Le capteur FG-MOSFET, issu d'un processus RF-CMOS à 0,13 µm, comprend une couche d'oxyde mince ayant une région de dispositif, une source et un drain associés à la région de puits de dispositif, séparés par une région de canal, une grille flottante s'étendant par-dessus la région de canal, et une extension de grille flottante s'étendant par-dessus la couche d'oxyde mince adjacente à la région de puits de dispositif. Dans une paire de capteurs appariés pour une mesure de rayonnement à double sensibilité, la grille flottante et l'extension de grille flottante d'un capteur à sensibilité supérieure FG-MOSFET sont dépourvues d'une couche de saliciure ou d'une couche de siliciure formée sur celles-ci et la grille flottante et l'extension de grille flottante d'un capteur à sensibilité inférieure FG-MOSFET possèdent une couche de saliciure ou une couche de siliciure formée sur celles-ci.
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