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1. WO2021049313 - SEMICONDUCTOR SAMPLE INSPECTION DEVICE AND INSPECTION METHOD

Publication Number WO/2021/049313
Publication Date 18.03.2021
International Application No. PCT/JP2020/032445
International Filing Date 27.08.2020
IPC
H01L 21/66 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
G01R 31/302 2006.1
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
28Testing of electronic circuits, e.g. by signal tracer
302Contactless testing
CPC
G01R 23/16
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
23Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
16Spectrum analysis; Fourier analysis
G01R 31/2879
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
28Testing of electronic circuits, e.g. by signal tracer
2851Testing of integrated circuits [IC]
2855Environmental, reliability or burn-in testing
2872related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
2879related to electrical aspects, e.g. to voltage or current supply or stimuli or to electrical loads
G01R 31/302
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
28Testing of electronic circuits, e.g. by signal tracer
302Contactless testing
G01R 31/308
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
28Testing of electronic circuits, e.g. by signal tracer
302Contactless testing
308using non-ionising electromagnetic radiation, e.g. optical radiation
G01R 31/311
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
28Testing of electronic circuits, e.g. by signal tracer
302Contactless testing
308using non-ionising electromagnetic radiation, e.g. optical radiation
311of integrated circuits
Applicants
  • 浜松ホトニクス株式会社 HAMAMATSU PHOTONICS K.K. [JP]/[JP]
Inventors
  • 山田 俊毅 YAMADA Toshiki
Agents
  • 長谷川 芳樹 HASEGAWA Yoshiki
  • 黒木 義樹 KUROKI Yoshiki
  • 柴山 健一 SHIBAYAMA Kenichi
Priority Data
2019-16742013.09.2019JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR SAMPLE INSPECTION DEVICE AND INSPECTION METHOD
(FR) DISPOSITIF D'INSPECTION D'ÉCHANTILLON DE SEMI-CONDUCTEUR ET PROCÉDÉ D'INSPECTION
(JA) 半導体試料の検査装置及び検査方法
Abstract
(EN) An inspection device 1 comprises a reference signal output unit 24, a removal processing unit 25, a gain setting unit 26, and an electrical characteristics measuring unit 28. The reference signal output unit 24 is electrically connected to an external power source device 2 in parallel with a semiconductor sample S and outputs a reference signal corresponding to the output of the external power source device 2. The removal processing unit 25 carries out, on the basis of the reference signal, a removal process for removing a noise component caused by the output of the external power source device 2 from a current signal outputted from the semiconductor sample S and outputs a process signal. The gain setting unit 26 sets a gain value for the reference signal output unit on the basis of the process signal. The electrical characteristics measuring unit 28 measures the electrical characteristics of the semiconductor sample S on the basis of the process signal after the removal process is performed thereon on the basis of the reference signal output from the reference signal output unit having a gain value set therefor by the gain setting unit.
(FR) Dispositif d'inspection 1 comprenant une unité de sortie de signal de référence 24, une unité d'élimination de retrait 25, une unité de réglage de gain 26 et une unité de mesure de caractéristiques électriques 28. L'unité de sortie de signal de référence 24 est connectée électriquement à un dispositif source d'alimentation externe (2) en parallèle à un échantillon de semi-conducteur S et délivre en sortie un signal de référence correspondant à la sortie du dispositif source d'alimentation externe 2. L'unité de traitement de retrait 25 réalise, sur la base du signal de référence, un processus de retrait pour retirer une composante de bruit provoquée par la sortie du dispositif source d'alimentation externe 2 d'un signal de courant délivré en sortie à partir de l'échantillon de semi-conducteur S et délivre en sortie un signal de traitement. L'unité de réglage de gain 26 règle une valeur de gain pour l'unité de sortie de signal de référence sur la base du signal de traitement. L'unité de mesure de caractéristiques électriques 28 mesure les caractéristiques électriques de l'échantillon de semi-conducteur S sur la base du signal de traitement après que le processus de retrait a été effectué sur celui-ci sur la base du signal de référence délivré en sortie par l'unité de sortie de signal de référence ayant une valeur de gain réglée pour celui-ci par l'unité de réglage de gain.
(JA) 検査装置1は、参照信号出力部24と、除去処理部25と、ゲイン設定部26と、電気特性測定部28と、を備える。参照信号出力部24は、半導体試料Sと電気的に並列に外部電源装置2に接続されると共に、外部電源装置2の出力に応じた参照信号を出力する。除去処理部25は、半導体試料Sから出力された電流信号から外部電源装置2の出力によるノイズ成分の除去処理を参照信号に基づいて行い、処理信号を出力する。ゲイン設定部26は、処理信号に基づいて、参照信号出力部のゲインの値を設定する。電気特性測定部28は、ゲイン設定部によってゲインの値が設定された参照信号出力部からの参照信号に基づき除去処理が行われた処理信号に基づいて、半導体試料Sの電気特性を測定する。
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