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1. WO2021045934 - METHOD OF IMPROVING READ CURRENT STABILITY IN ANALOG NON-VOLATILE MEMORY BY SCREENING MEMORY CELLS

Publication Number WO/2021/045934
Publication Date 11.03.2021
International Application No. PCT/US2020/047834
International Filing Date 25.08.2020
IPC
G11C 29/44 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
29Checking stores for correct operation; Testing stores during standby or offline operation
04Detection or location of defective memory elements
08Functional testing, e.g. testing during refresh, power-on self testing or distributed testing
12Built-in arrangements for testing, e.g. built-in self testing
44Indication or identification of errors, e.g. for repair
G11C 29/50 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
29Checking stores for correct operation; Testing stores during standby or offline operation
04Detection or location of defective memory elements
50Marginal testing, e.g. race, voltage or current testing
G11C 16/34 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
G11C 11/56 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
G11C 16/04 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
04using variable threshold transistors, e.g. FAMOS
G11C 16/26 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
26Sensing or reading circuits; Data output circuits
CPC
G06F 12/0246
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
FELECTRIC DIGITAL DATA PROCESSING
12Accessing, addressing or allocating within memory systems or architectures
02Addressing or allocation; Relocation
0223User address space allocation, e.g. contiguous or non contiguous base addressing
023Free address space management
0238Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
0246in block erasable memory, e.g. flash memory
G06F 2212/7206
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
FELECTRIC DIGITAL DATA PROCESSING
2212Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
72Details relating to flash memory management
7206Reconfiguration of flash memory system
G06F 2212/7208
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
FELECTRIC DIGITAL DATA PROCESSING
2212Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
72Details relating to flash memory management
7208Multiple device management, e.g. distributing data over multiple flash devices
G11C 11/5628
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
5621using charge storage in a floating gate
5628Programming or writing circuits; Data input circuits
G11C 11/5642
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
5621using charge storage in a floating gate
5642Sensing or reading circuits; Data output circuits
G11C 16/0425
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
04using variable threshold transistors, e.g. FAMOS
0408comprising cells containing floating gate transistors
0425comprising cells containing a merged floating gate and select transistor
Applicants
  • SILICON STORAGE TECHNOLOGY, INC. [US]/[US]
Inventors
  • MARKOV, Viktor
  • KOTOV, Alexander
Agents
  • LIMBACH, Alan
Priority Data
16/828,20624.03.2020US
62/895,45803.09.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF IMPROVING READ CURRENT STABILITY IN ANALOG NON-VOLATILE MEMORY BY SCREENING MEMORY CELLS
(FR) PROCÉDÉ D'AMÉLIORATION DE LA STABILITÉ DE COURANT DE LECTURE DANS UNE MÉMOIRE NON VOLATILE ANALOGIQUE PAR CRIBLAGE DE CELLULES DE MÉMOIRE
Abstract
(EN)
A memory device that includes a plurality of non-volatile memory cells and a controller. The controller is configured to erase the plurality of memory cells, program each of the memory cells, and for each of the memory cells, measure a threshold voltage applied to the memory cell corresponding to a target current through the memory cell in a first read operation, re-measure a threshold voltage applied to the memory cell corresponding to the target current through the memory cell in a second read operation, and identify the memory cell as defective if a difference between the measured threshold voltage and the re-measured threshold voltage exceeds a predetermined amount.
(FR)
Dispositif de mémoire qui comprend une pluralité de cellules de mémoire non volatile et un dispositif de commande. Le dispositif de commande est configuré pour effacer la pluralité de cellules de mémoire, programmer chacune des cellules de mémoire, et pour chacune des cellules de mémoire, mesurer une tension de seuil appliquée à la cellule de mémoire correspondant à un courant cible à travers la cellule de mémoire dans une première opération de lecture, remesurer une tension de seuil appliquée à la cellule de mémoire correspondant au courant cible à travers la cellule de mémoire dans une seconde opération de lecture, et identifier la cellule de mémoire comme étant défectueuse si une différence entre la tension de seuil mesurée et la tension de seuil remesurée dépasse une quantité prédéterminée.
Also published as
Latest bibliographic data on file with the International Bureau