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1. WO2021044644 - FILM FORMATION METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Publication Number WO/2021/044644
Publication Date 11.03.2021
International Application No. PCT/JP2020/000539
International Filing Date 09.01.2020
IPC
C30B 29/16 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
16Oxides
C23C 16/40 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
H01L 21/368 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
368using liquid deposition
CPC
C23C 16/40
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
C30B 29/16
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
16Oxides
Applicants
  • 株式会社デンソー DENSO CORPORATION [JP]/[JP]
  • 国立大学法人京都工芸繊維大学 NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY [JP]/[JP]
Inventors
  • 永岡 達司 NAGAOKA Tatsuji
  • 西中 浩之 NISHINAKA Hiroyuki
  • 吉本 昌広 YOSHIMOTO Masahiro
  • 田原 大祐 TAHARA Daisuke
Agents
  • 特許業務法人 快友国際特許事務所 KAI-U PATENT LAW FIRM
Priority Data
PCT/JP2019/03443602.09.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) FILM FORMATION METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
(FR) PROCÉDÉ DE FORMATION DE FILM ET PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEURS
(JA) 成膜方法、及び、半導体装置の製造方法
Abstract
(EN)
Proposed is a film formation method for forming, on a substrate, an oxide film on which doping of bismuth is performed and which has characteristics of a semiconductor or a conductor. This film formation method has a step for heating the substrate and supplying, to the surface of the substrate, a mist of a solution which has dissolved therein a bismuth compound and an oxide film material containing constituent elements of the oxide film. By using the film formation method, it is possible to form, on a substrate, an oxide film on which doping of bismuth is performed and which has characteristics of a semiconductor or a conductor.
(FR)
L'invention concerne un procédé de formation de film pour former, sur un substrat, un film d'oxyde sur lequel le dopage du bismuth est effectué et qui présente des caractéristiques d'un semi-conducteur ou d'un conducteur. Ce procédé de formation de film comprend une étape consistant à chauffer le substrat et à fournir, à la surface du substrat, un brouillard d'une solution dans laquelle un composé de bismuth est dissous et un matériau de film d'oxyde contenant des éléments constitutifs du film d'oxyde. En utilisant le procédé de formation de film, il est possible de former, sur un substrat, un film d'oxyde sur lequel le dopage du bismuth est effectué et qui présente des caractéristiques d'un semi-conducteur ou d'un conducteur.
(JA)
ビスマスがドープされているとともに半導体または導体の特性を有する酸化物膜を基体上に形成する成膜方法を提案する。この成膜方法は、前記基体を加熱しながら前記酸化物膜の構成元素を含む酸化物膜材料とビスマス化合物が溶解した溶液のミストを前記基体の表面に供給する工程、を有する。この成膜方法を用いることによって、ビスマスがドープされているとともに半導体または導体の特性を有する酸化物膜を基体上に形成することが可能となる。
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