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1. WO2021040183 - THIN FILM TRANSISTOR HAVING METAL OXIDE CHANNEL LAYER CONTAINING BIXBYITE CRYSTAL, AND VERTICAL NON-VOLATILE MEMORY DEVICE

Publication Number WO/2021/040183
Publication Date 04.03.2021
International Application No. PCT/KR2020/005335
International Filing Date 22.04.2020
IPC
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 29/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
H01L 21/324 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 29/792 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
792with charge trapping gate insulator, e.g. MNOS-memory transistor
H01L 27/11582 2017.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11563with charge-trapping gate insulators, e.g. MNOS or NROM
11578characterised by three-dimensional arrangements, e.g. with cells on different height levels
1158with source and drain on different levels, e.g. with sloping channels
11582the channels comprising vertical portions, e.g. U-shaped channels
H01L 27/1157 2017.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11563with charge-trapping gate insulators, e.g. MNOS or NROM
11568characterised by the memory core region
1157with cell select transistors, e.g. NAND
CPC
H01L 21/324
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 27/1157
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11563with charge-trapping gate insulators, e.g. MNOS or NROM
11568characterised by the memory core region
1157with cell select transistors, e.g. NAND
H01L 27/11573
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11563with charge-trapping gate insulators, e.g. MNOS or NROM
11573characterised by the peripheral circuit region
H01L 27/11582
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11563with charge-trapping gate insulators, e.g. MNOS or NROM
11578characterised by three-dimensional arrangements, e.g. with cells on different height levels
1158with source and drain on different levels, e.g. with sloping channels
11582the channels comprising vertical portions, e.g. U-shaped channels
H01L 29/66
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
H01L 29/66742
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66742Thin film unipolar transistors
Applicants
  • 한양대학교 산학협력단 INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY [KR]/[KR]
Inventors
  • 정재경 JEONG, Jae Kyeong
  • 양현지 YANG, Hyun Ji
  • 설현주 SEUL, Heyon Joo
Agents
  • 특허법인 이상 E-SANG PATENT & TRADEMARK LAW FIRM
Priority Data
10-2019-010594028.08.2019KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) THIN FILM TRANSISTOR HAVING METAL OXIDE CHANNEL LAYER CONTAINING BIXBYITE CRYSTAL, AND VERTICAL NON-VOLATILE MEMORY DEVICE
(FR) TRANSISTOR EN COUCHES MINCES AYANT UNE COUCHE DE CANAL D'OXYDE MÉTALLIQUE CONTENANT UN CRISTAL DE BIXBYITE ET DISPOSITIF DE MÉMOIRE NON VOLATILE VERTICAL
(KO) 빅스비아이트 결정을 함유하는 금속 산화물 채널층을 구비하는 박막트랜지스터 및 수직형 비휘발성 메모리 소자
Abstract
(EN)
Provided are a thin film transistor and a vertical non-volatile memory device. The thin film transistor comprises: a gate electrode; and a metal oxide channel layer extending across the top or bottom of the gate electrode, comprising a bixbyite crystal, and having semiconducting properties. An insulating layer is disposed between the gate electrode and the metal oxide channel layer. Source and drain electrodes are electrically connected to end portions at both sides, respectively, of the metal oxide channel layer.
(FR)
L'invention concerne un transistor en couches minces et un dispositif de mémoire non volatile vertical. Le transistor en couches minces comporte : une électrode grille ; une couche canal d'oxyde métallique qui s'étend à travers la partie supérieure ou la partie inférieure de l'électrode grille, qui contient un cristal de bixbyite et qui possède des propriétés semi-conductrices. Une couche isolante est disposée entre l'électrode grille et la couche canal d'oxyde métallique. Des électrodes source et déversoir sont connectées électriquement à des parties d'extrémité de chaque côté, respectivement, de la couche canal d'oxyde métallique.
(KO)
박막트랜지스터 및 수직형 비휘발성 메모리 소자를 제공한다. 상기 박막트랜지스터는 게이트 전극, 및 상기 게이트 전극의 상부 또는 하부를 가로지르는 빅스비아이트(Bixbyite) 결정을 구비하면서 반도체성을 갖는 금속 산화물 채널층을 구비한다. 상기 게이트 전극과 상기 금속 산화물 채널층 사이에 절연막이 배치된다. 상기 금속 산화물 채널층의 양측 단부들에 소오스 및 드레인 전극들이 각각 전기적으로 접속한다.
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