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1. WO2021040162 - LIGHT EMITTING ELEMENT, MANUFACTURING METHOD THEREFOR AND DISPLAY DEVICE INCLUDING SAME

Publication Number WO/2021/040162
Publication Date 04.03.2021
International Application No. PCT/KR2020/002789
International Filing Date 27.02.2020
IPC
H01L 33/24 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
24of the light emitting region, e.g. non-planar junction
H01L 33/38 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 27/15 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
CPC
H01L 27/15
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
H01L 27/156
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
153in a repetitive configuration, e.g. LED bars
156two-dimensional arrays
H01L 33/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 33/005
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
H01L 33/24
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
24of the light emitting region, e.g. non-planar junction
H01L 33/38
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
Applicants
  • 삼성디스플레이 주식회사 SAMSUNG DISPLAY CO., LTD. [KR]/[KR]
Inventors
  • 이동언 LEE, Dong Eon
  • 박후근 PARK, Hoo Keun
  • 안문정 AN, Moon Jung
  • 유철종 YOO, Chul Jong
  • 강혜림 KANG, Hye Lim
  • 김동균 KIM, Dong Gyun
Agents
  • 특허법인 가산 KASAN IP & LAW FIRM
Priority Data
10-2019-010425026.08.2019KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) LIGHT EMITTING ELEMENT, MANUFACTURING METHOD THEREFOR AND DISPLAY DEVICE INCLUDING SAME
(FR) ÉLÉMENT ÉLECTROLUMINESCENT, SON PROCÉDÉ DE FABRICATION ET DISPOSITIF D'AFFICHAGE LE COMPORTANT
(KO) 발광 소자, 이의 제조 방법 및 이를 포함하는 표시 장치
Abstract
(EN)
A light emitting element, a manufacturing method therefor and a display device including same are provided. The light emitting element comprises: a first semiconductor layer doped with a first polarity; a second semiconductor layer doped with a second polarity that differs from the first polarity; an active layer arranged between the first semiconductor layer and the second semiconductor layer; a first outer film, which is arranged to encompass at least the outer surface of the active layer, and extends in a first direction in which the first semiconductor layer, the active layer and the second semiconductor layer are stacked; and a second outer film for encompassing a part, in which the first outer film is not arranged, of the outer surface of the first semiconductor layer.
(FR)
La présente invention porte sur un élément électroluminescent, son procédé de fabrication et un dispositif d'affichage le comportant. L'élément électroluminescent comprend : une première couche semi-conductrice dopée avec une première polarité ; une seconde couche semi-conductrice dopée avec une seconde polarité qui diffère de la première polarité ; une couche active disposée entre la première couche semi-conductrice et la seconde couche semi-conductrice ; un premier film externe, qui est agencé pour englober au moins la surface extérieure de la couche active, et s'étend dans une première direction dans laquelle la première couche semi-conductrice, la couche active et la seconde couche semi-conductrice sont empilées ; et un second film externe pour entourer une partie, dans laquelle le premier film externe n'est pas disposé, de la surface externe de la première couche semi-conductrice.
(KO)
발광 소자, 이의 제조 방법 및 이를 포함하는 표시 장치가 제공된다. 발광 소자는 제1 극성으로 도핑된 제1 반도체층, 상기 제1 극성과 다른 제2 극성으로 도핑된 제2 반도체층, 상기 제1 반도체층과 상기 제2 반도체층 사이에 배치된 활성층, 적어도 상기 활성층의 외면을 둘러싸도록 배치되고, 상기 제1 반도체층, 상기 활성층 및 상기 제2 반도체층이 적층된 제1 방향으로 연장된 제1 외막 및 상기 제1 반도체층의 외면 중 상기 제1 외막이 배치되지 않은 부분을 둘러싸는 제2 외막을 포함한다.
Also published as
Latest bibliographic data on file with the International Bureau