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1. WO2021039760 - PATTERN FORMATION METHOD AND MANUFACTURING METHOD FOR ELECTRONIC DEVICE

Publication Number WO/2021/039760
Publication Date 04.03.2021
International Application No. PCT/JP2020/031953
International Filing Date 25.08.2020
IPC
G03F 7/039 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G03F 7/32 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
30Imagewise removal using liquid means
32Liquid compositions therefor, e.g. developers
CPC
G03F 7/039
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
G03F 7/20
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G03F 7/32
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
30Imagewise removal using liquid means
32Liquid compositions therefor, e.g. developers
Applicants
  • 富士フイルム株式会社 FUJIFILM CORPORATION [JP]/[JP]
Inventors
  • 土橋 徹 TSUCHIHASHI Toru
Agents
  • 伊東 秀明 ITOH Hideaki
  • 三橋 史生 MITSUHASHI Fumio
Priority Data
2019-15699429.08.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PATTERN FORMATION METHOD AND MANUFACTURING METHOD FOR ELECTRONIC DEVICE
(FR) PROCÉDÉ DE FORMATION DE MOTIF ET PROCÉDÉ DE FABRICATION DE DISPOSITIF ÉLECTRONIQUE
(JA) パターン形成方法、電子デバイスの製造方法
Abstract
(EN)
The present invention addresses the problem of providing a pattern formation method capable of forming a pattern excellent in resolution using a main chain scission-type resist, and a manufacturing method for an electronic device. This pattern formation method comprises: a step for forming a resist film on a support using a resist composition containing a polymer the molecular weight of which is reduced by cutting of a main chain bond by exposure; a step for exposing the resist film; and a step for developing the exposed resist film using a developing solution. The developing solution contains, as a main component, an alcohol-based solvent containing a branched chain hydrocarbon radical.
(FR)
La présente invention aborde le problème consistant à fournir un procédé de formation de motif capable de former un motif ayant une excellente résolution à l'aide d'une résine de type scission de chaîne principale, et un procédé de fabrication d'un dispositif électronique. Ce procédé de formation de motif comprend les étapes suivante : la formation d'un film de réserve sur un support à l'aide d'une composition de réserve contenant un polymère dont le poids moléculaire est réduit en coupant une liaison de chaîne principale grâce à une exposition ; l'exposition du film de réserve ; et le développement du film de réserve exposé à l'aide d'une solution de développement. La solution de développement contient, en tant que composant principal, un solvant à base d'alcool contenant un radical hydrocarboné à chaîne ramifiée.
(JA)
本発明の課題は、主鎖切断型レジストを用いて解像性に優れたパターンを形成できるパターン形成方法、電子デバイスの製造方法を提供することである。 本発明のパターン形成方法は、露光により主鎖の結合が切断されて低分子量化する重合体を含むレジスト組成物を用いて支持体上にレジスト膜を形成する工程と、上記レジスト膜を露光する工程と、上記露光されたレジスト膜を、現像液を用いて現像する工程と、を有する、パターン形成方法であって、上記現像液が、分岐鎖状の炭化水素基を含むアルコール系溶剤を主成分として含む。
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