Processing

Please wait...

Settings

Settings

Goto Application

1. WO2021039547 - LIGHT DETECTION DEVICE

Publication Number WO/2021/039547
Publication Date 04.03.2021
International Application No. PCT/JP2020/031322
International Filing Date 19.08.2020
IPC
H01L 31/0232 2014.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0232Optical elements or arrangements associated with the device
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/359 2011.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
357Noise processing, e.g. detecting, correcting, reducing or removing noise
359applied to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
H04N 5/369 2011.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
CPC
H01L 27/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 31/0232
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0232Optical elements or arrangements associated with the device
H04N 5/359
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
357Noise processing, e.g. detecting, correcting, reducing or removing noise
359applied to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
H04N 5/369
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
Applicants
  • 浜松ホトニクス株式会社 HAMAMATSU PHOTONICS K.K. [JP]/[JP]
Inventors
  • 下原 健史 SHIMOHARA Takeshi
Agents
  • 長谷川 芳樹 HASEGAWA Yoshiki
  • 黒木 義樹 KUROKI Yoshiki
  • 柴山 健一 SHIBAYAMA Kenichi
Priority Data
2019-15277523.08.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) LIGHT DETECTION DEVICE
(FR) DISPOSITIF DE DÉTECTION DE LUMIÈRE
(JA) 光検出装置
Abstract
(EN)
Provided is a light detection device including: an optical semiconductor element having a plurality of light-receiving sections; and a light-transmitting substrate that is joined with the optical semiconductor element directly or via only a light-transmitting adhesive layer. A surface of the light-transmitting substrate on the opposite side from the optical semiconductor element is provided with a first varying-refractive-index layer that has an irregular structure in which the refractive index continuously varies toward the light-transmitting substrate from the refractive index of the air to the refractive index of the light-transmitting substrate. A>B/[2tan{sin-1(sin1º/n)}] holds, assuming that A is the distance between the optical semiconductor element and the first varying-refractive-index layer, that B is the distance between adjacent light-receiving sections among the plurality of light-receiving sections, and that n is the refractive index of the light-transmitting substrate with respect to the refractive index of the air.
(FR)
L'invention concerne un dispositif de détection de lumière qui comprend : un élément semi-conducteur optique ayant une pluralité de sections de réception de lumière ; et un substrat transmettant la lumière qui est relié à l'élément semi-conducteur optique directement ou uniquement par l'intermédiaire d'une couche adhésive transmettant la lumière. Une surface du substrat transmettant la lumière sur le côté opposé à l'élément semi-conducteur optique est pourvue d'une première couche à indice de réfraction variable qui présente une structure irrégulière dans laquelle l'indice de réfraction varie en continu vers le substrat transmettant la lumière entre l'indice de réfraction de l'air et l'indice de réfraction du substrat transmettant la lumière. L'expression A>B/[2tan{sin-1(sin1º/n)}] se vérifie, A étant la distance entre l'élément semi-conducteur optique et la première couche à indice de réfraction variable, B étant la distance entre des sections de réception de lumière adjacentes parmi la pluralité de sections de réception de lumière, et n étant l'indice de réfraction du substrat transmettant la lumière par rapport à l'indice de réfraction de l'air.
(JA)
光検出装置は、複数の受光部を有する光半導体素子と、光半導体素子に直接的に又は光透過性の接着層のみを介して接合された光透過基板と、を備える。光透過基板における光半導体素子とは反対側の表面には、屈折率が光透過基板に向かって空気の屈折率から光透過基板の屈折率に連続的に変化する凹凸構造を有する第1屈折率変化層が設けられている。光半導体素子と第1屈折率変化層との間の距離をAとし、複数の受光部において隣り合う受光部の間の距離をBとし、空気の屈折率に対する光透過基板の屈折率をnとすると、A>B/[2tan{sin-1(sin1°/n)}]が成立する。
Also published as
Latest bibliographic data on file with the International Bureau